用氢分子相互作用研究单层MoS $_2$的电子性质
Probing the Electronic Properties of Monolayer MoS$_2$ via Interaction with Molecular Hydrogen
摘要：
本工作详细地研究了分子氢（H $_2$）与单层MoS $_2$场效应晶体管（MoS $_2$ FET）之间的相互作用，旨在用于传感应用。MoS $_2$ FET表现出对H $_2$的响应，其在相对低的操作温度范围（300-473 K）下覆盖宽的浓度范围（0.1 - 90%）。最重要的是，基于MoS $_2$ FET的H $_2$传感器显示出理想的性质，例如完全可逆性和不存在催化金属掺杂剂（Pt或Pd）。实验结果表明，由于可逆的电荷转移过程，MoS $_2$的电导率作为H $_2$浓度的函数单调增加。据认为，这种过程涉及解离H $_2$吸附驱动的相互作用与硫空位在MoS $_2$表面（VS）。这一描述与有关H $_2$在MoS $_2$上吸附的密度泛函理论研究一致。最后，使用原子层沉积氧化铝的部分缺陷钝化的MoS $_2$ FET的测量结果表明，VS在H $_2$与MoS $_2$的相互作用中起着重要作用。这些发现为单层MoS $_2$和H $_2$在催化过程中的未来应用提供了启示，也介绍了MoS $_2$ FET作为有前途的H $_2$传感器。
英文摘要：
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors based on MoS$_2$ FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS$_2$ monotonically increases as a function of the H$_2$ concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H$_2$ adsorption driven by interaction with sulfur vacancies in the MoS$_2$ surface (VS). This description is in agreement with related density functional theory studies about H$_2$ adsorption on MoS$_2$. Finally, measurements on partially defect-passivated MoS$_2$ FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H$_2$ interaction with the MoS$_2$. These findings provide insights for futures applications in catalytic process between monolayer MoS$_2$ and H$_2$ and also introduce MoS$_2$ FETs as promising H$_2$ sensors.
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