利用高电场应力加速和阻止相变存储单元中的电阻漂移
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
摘要：
我们在长×宽×厚= ~500 nm × ~100 nm × ~ 50 nm的熔体淬火非晶Ge_2Sb_2Te_5线电池中观察到125 K - 300 K温度范围内的电阻漂移。使用小电压扫描测量的漂移系数似乎从300 K时的0.12 +/- 0.029降低到125 K时的0.075 +/- 0.006。使用高压扫描（0至~25 V）在85 K - 300 K测量的非晶化电池的电流-电压特性显示出线性、低场指数和高场指数导电机制的组合，所有这些都是温度的强函数。非晶化后的第一次高压扫描（电场高达击穿场的~70%）由于加速漂移而显示出明显的电流-电压特性滞后，而连续扫描显示出稳定的特性。在50 nA的顺从电流（电流密度约为104 A/cm ^2）下实现了稳定化，防止了电池中明显的自加热。所观察到的加速和停止的电阻漂移与应用程序的高电场是由于在非晶Ge 2Sb 2 Te 5内的静电势分布的变化，由于陷阱电荷，减少隧穿电流。稳定的电流-电压特性被用来提取在85 K - 300 K的温度范围内的导电机制的载流子激活能。在200 - 300 K范围内，与线性电流-电压响应相关的载流子激活能被提取为331 +/- 5 meV，而对于给出指数电流-电压响应的机制，在85 K至300 K范围内，载流子激活能被提取为233 +/- 2 meV和109 +/- 5 meV。
英文摘要：
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift coefficients measured using small voltage sweeps appear to decrease from 0.12 +/- 0.029 at 300 K to 0.075 +/- 0.006 at 125 K. The current-voltage characteristics of the amorphized cells measured in the 85 K - 300 K using high-voltage sweeps (0 to ~25 V) show a combination of a linear, low-field exponential and high-field exponential conduction mechanisms, all of which are strong functions of temperature. The very first high-voltage sweep after amorphization (with electric fields up to ~70% of the breakdown field) shows clear hysteresis in the current-voltage characteristics due to accelerated drift, while the consecutive sweeps show stable characteristics. Stabilization was achieved with 50 nA compliance current (current densities ~104 A/cm^2), preventing appreciable self-heating in the cells. The observed acceleration and stoppage of the resistance drift with the application of high electric fields is attributed to changes in the electrostatic potential profile within amorphous Ge2Sb2Te5 due to trapped charges, reducing tunneling current. Stable current-voltage characteristics are used to extract carrier activation energies for the conduction mechanisms in 85 K - 300 K temperature range. The carrier activation energy associated with linear current-voltage response is extracted to be 331 +/- 5 meV in 200 - 300 K range, while carrier activation energies of 233 +/- 2 meV and 109 +/- 5 meV are extracted in 85 K to 300 K range for the mechanisms that give exponential current-voltage responses.
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