极浅表皮深度波导中用于实现极低波导串扰的奇异耦合
Exceptional coupling in extreme skin-depth waveguides for extremely low waveguide crosstalk
AI总结：
针对光子芯片集成密度受波导串扰限制的问题，提出利用极浅表皮深度波导的奇异耦合实现串扰完全抑制，在SOI平台验证效果，可缩小芯片面积。
摘要：
光子芯片可将复杂光学系统微型化，使其极为小巧便携，为众多光学应用提供多功能特性。提升光子芯片的集成密度极具必要性，因其能带来更多功能、更低成本与更低功耗。然而，光子芯片的集成密度受限于波导串扰，该串扰由包层中的倏逝波引发。本研究表明，借助极浅表皮深度（eskid）波导中的奇异耦合，可完全抑制波导串扰。耦合eskid波导中的各向异性介电微扰会引发此类奇异耦合，进而产生无限长的耦合长度。我们在与互补金属氧化物半导体（CMOS）工艺兼容的绝缘体上硅（SOI）平台上，通过奇异耦合实现了波导串扰的极致抑制。eskid波导中的奇异耦合理念还可应用于众多其他光子器件，显著缩小芯片整体占用面积。
英文摘要：
Photonic chips can miniaturize complicate optical systems very tiny and portable, providing versatile functionalities for many optical applications. Increasing the photonic chip integration density is highly desired as it provides more functionalities, low cost, and lower power consumption. However, photonic chip integration density is limited by the waveguide crosstalk, which is caused by the evanescent waves in the cladding. Here we show that the waveguide crosstalk can be suppressed completely with the exceptional coupling in extreme skin-depth (eskid) waveguides. The anisotropic dielectric perturbations in the coupled eskid waveguides cause such an exceptional coupling, resulting in infinitely long coupling length. We demonstrate the extreme suppression of waveguide crosstalk via exceptional coupling on a silicon-on-insulator (SOI) platform, which is compatible with a complementary metal-oxide-semiconductor (CMOS) process. The idea of exceptional coupling in eskid waveguides can be applied to many other photonic devices as well, significantly reducing entire chip footprints.
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