1550 nm波长大面积微丝MoSi单光子探测器
Large-area microwire MoSi single-photon detectors at 1550 nm wavelength
摘要：
我们证明了在1550 nm波长的曲折形超导纳米线单光子探测器制成的3 nm厚的MoSi膜的宽度为1和3 $μm$，和有效面积高达400 400 $μm^2$的饱和内部检测效率。尽管器件中存在发夹弯和大量方形（高达$10^4$），但在99%的开关电流下测得暗计数率为约10 $^3$ cps。该值比最近报道的具有分流电阻器的短MoSi器件的结果低约两个数量级。我们还发现，具有相同几何形状的5 nm厚的MoSi探测器对单个近红外光子不敏感，这可能与超导序参量的不同水平的抑制有关。然而，我们在3 nm厚的MoSi器件上获得的结果与动力学方程方法框架中的预测吻合得很好。
英文摘要：
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 $μm$, and active areas up to 400 by 400 $μm^2$. Despite hairpin turns and a large number of squares (up to $10^4$) in the device, the dark count rate was measured to be ~10$^3$ cps at 99% of the switching current. This value is about two orders of magnitude lower than results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in a good agreement with predictions in the frame of a kinetic-equation approach.
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