arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2002.05136quant-ph

Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory

Manuel Rispler, Pascal Cerfontaine, Veit Langrock, Barbara M. Terhal

英文摘要:

Based on numerically-optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of Gallium Arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, read-out error, quasi-static as well as fast gate noise. Considering the trade-off between qubit read-out error and dephasing time (T2) over measurement time, we identify a sub-threshold region for the phase-flip code which lies within experimental reach.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑