We perform ab-initio calculations on Bi$_\mathrm{Se}$ antisite defects in the surface of Bi$_2$Se$_3$, finding strong low-energy defect resonances with a spontaneous ferromagnetism, fixed to an out-of-plane orientation due to an exceptional large magnetic anisotropy energy. For antisite defects in the surface layer, we find semi-itinerant ferromagnetism and strong hybridization with the Dirac surface state, generating a finite energy gap. For deeper lying defects, such hybridization is largely absent, the magnetic moments becomes more localized, and no energy gap is present.
We present an extensive density functional theory study of the electronic, magnetic and transport properties of GaAs and AlAs digital ferromagnetic heterostructures. These can be obtained by $δ$-doping with Mn the GaAs layers of a GaAs/AlAs superlattice. Our analysis spans a range of Mn concentrations and considers the presence of compensating defects such as As antisites. In the defect-free case all the heterostructures studied present an half-metallic electronic structure. In contrast when As antisites are present the half-metallic state is destroyed and the heterostructures behave as dirty …
We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, which originates from disorder in the Mn distribution as well as the presence of As antisite defects. The experimentally-determined hopping energy at the Curie temperature is roughly constant over a seri…
The effect of a variety of intrinsic defects and defect clusters in bulk and thin films of SrTiO$_3$ on ferroelectric polarization and switching mechanism is investigated by means of density-functional-theory (DFT) based calculations and the Berry phase approach. Our results show that both the titanium Ti$_\mathrm{Sr}^{\bullet \bullet}$ and strontium Sr$_\mathrm{Ti}^{"}$ antisite defects induce ferroelectric polarization in SrTiO$_3$, with the Ti$_\mathrm{Sr}^{\bullet \bullet}$ defect causing a more pronounced spontaneous polarization and higher activation barriers of polarization reversal tha…
What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very h…
Spontaneous nonreciprocal transport in a gate-tunable ferromagnetic Rashba 2-dimensional electron gas
Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay（阿尔贝·费尔特实验室，法国国家科学研究中心，泰雷兹集团，巴黎萨克雷大学）；Helmholtz-Zentrum Berlin（柏林赫尔姆霍兹中心）；Institut für Physik, Martin-Luther-Universität, Halle-Wittenberg（马丁·路德哈勒-维滕贝格大学物理研究所）；Plateforme Mesures Physiques à Basses Températures, Sorbonne Université（索邦大学低温测量平台）；Saha Institute of Nuclear Physics（萨哈核物理研究所）；Max Planck Institute of Microstructure Physics（马克斯·普朗克微结构物理研究所）
The (111) surface of SnTe hosts one isotropic $\barΓ$-centered and three degenerate anisotropic $\bar{M}$- centered Dirac surface states. We predict that a nematic phase with spontaneously broken $C_3$ symmetry will occur in the presence of an external magnetic field when the $N=0$ $\bar{M}$ Landau levels are $1/3$ or $2/3$ filled. The nematic state phase boundary is controlled by a competition between intravalley Coulomb interactions that favor a valley-polarized state, and weaker intervalley scattering processes that increase in relative strength with magnetic field. An in-plane Zeeman field…
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single conduction band electron is able to induce a spontaneous collective magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions. The carrier mediated ferromagnetism in the dot survives at temperatures above 1 Kelvin, two orders of magnitude larger than the Curie temperature for the same material in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of injected electrons.
Electrons in moiré flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such system composed of twisted bilayer graphene aligned to hexagonal boron nitride. We find a magnetization of several Bohr magnetons per charge carrier, demonstrating that the magnetism is primarily orbital in nature. Our measurements reveal a large change in the magnetization as the chemical potential is swept across the quantum anomalous Hall gap consistent with …
In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism that has eluded experiments for the last ninety years. Our platform is the exotic two-dimensional Fermi sea of composite fermions at half-filling of the lowest Landau level. Via quantitative m…
In mean-field-theory bilayer graphene's massive Dirac fermion model has a family of broken inversion symmetry ground states with charge gaps and flavor dependent spontaneous inter layer charge transfers. We use a lattice Hartree-Fock model to explore some of the physics which controls whether or not this type of broken symmetry state, which can be viewed as a pseudospin ferromagnet, occurs in nature. We find that inversion symmetry is still broken in the lattice model and estimate that transferred areal densities are $\sim 10^{-5}$ electrons per carbon atom, that the associated energy gaps are…
We present a mean field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. When subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities is neglected, analytic result can be obtained for the dependence of the critical temperature and the spontaneous magnetization on the distribution of magnetic impurities and the quantum well width. The validity of this approximate theory has been tested by comparing its predictions with those from numerical self-consistent field calculations. Interactions among free carriers, accounted for u…
This paper presents synthesis methods and multifunctional properties of porous Co3O4 nanoplatelets and nanowires. Surprisingly, significantly superior Li-ion battery performance compared to other cathode materials is exhibited in the same samples as room temperature ferromagnetism (RTFM). Microstructure observations, and properties measurements and analysis indicate that the as-prepared Co3O4 nanostructures exhibit a spontaneous transformation of their morphology, showing a predominantly {110} plane orientation and preferentially presenting the Co3+ species at the surface at appreciate prepara…
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconducto…
We use the x-ray diffraction, magnetic susceptibility, isothermal magnetization, and photoelectron spectroscopy to study the structural, magnetic and electronic properties of La$_{(1-x)}$$A_x$CoO$_3$ ($A=$ Sr, Ca; $x=$ 0 -- 0.2) nanoparticles. The Rietveld refinements of room temperature powder x-ray diffraction data confirm the single phase and the rhombohedral crystal structure with R$\bar{3}$C space group. We find drastic changes in the magnetic properties and spin-states with Sr/Ca substitution (hole doping). For $x=$ 0 sample, the magnetic measurements show a ferromagnetic transition at T…
We study the realization in a model of graphene of the phenomenon whereby the tendency of gauge-field mediated interactions to break chiral symmetry spontaneously is greatly enhanced in an external magnetic field. We prove that, in the weak coupling limit, and where the electron-electron interaction satisfies certain mild conditions, the ground state of charge neutral graphene in an external magnetic field is a quantum Hall ferromagnet which spontaneously breaks the emergent U(4) symmetry to U(2)XU(2). We argue that, due to a residual CP symmetry, the quantum Hall ferromagnet order parameter i…
A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ crystal causes lattice mismatch with the underlayer to have a limited effect on the resulting crystal structure, as we demonstrate by thin film growth on tetragonal MgF$_{2}$ (110) and NiF$_{2}$ (…
Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-root3xroot3 surface with a spontaneous weak reconstruction has a strong tendency of ferromagnetism and nontrivial topological properties, characterized by spin polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or special…
Probing Quantum Anomalous Hall States in Twisted Bilayer WSe2 via Attractive Polaron Spectroscopy
Joint Quantum Institute (JQI), University of Maryland（马里兰大学联合量子研究所）；Electrical Engineering Department, University of Maryland（马里兰大学电气工程系）；Center for Functional Nanomaterials, Brookhaven National Laboratory（布鲁克海文国家实验室功能纳米材料中心）
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum states of magnetic polarons. The strong anisotropy of magnetic polaron states in disk-like quantum dots with holes comes from the spin splitting in the valence band. The binding energy and spontaneous magnetization of quantum dots oscillate with the number of particles and reflect the shell structure. Due to the Coulomb interaction, the maximum binding ener…
In bilayer graphene rotationally faulted to theta=1.1 degrees, interlayer tunneling and rotational misalignment conspire to create a pair of low energy flat band that have been found to host various correlated phenomena at partial filling. Most work to date has focused on the zero magnetic field phase diagram, with magnetic field (B) used as a probe of the B=0 band structure. Here, we show that twisted bilayer graphene (tBLG) in a B as low as 2T hosts a cascade of ferromagnetic Chern insulators with Chern number |C|=1,2 and 3. We argue that the emergence of the Chern insulators is driven by th…
Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator
Boston College（波士顿学院）；Emory University（埃默里大学）；University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Columbia University（哥伦比亚大学）；University of California Los Angeles（加州大学洛杉矶分校）；Harvard University（哈佛大学）
Quantum Anomalous Hall Effect in $d^{10}$ Oxide Monolayers
University of Science and Technology of China（中国科学技术大学）；Hefei National Laboratory, University of Science and Technology of China（合肥国家实验室，中国科学技术大学）；Institute of Artificial Intelligence, Hefei Comprehensive National Science Center（合肥综合性国家科学中心人工智能研究院）；Fuzhou University（福州大学）
