We present an ab initio theory of the spin-wave stiffness tensor for ordered and disordered itinerant ferromagnets with pair exchange interactions derived from a method of infinitesimal spin rotations. The resulting formula bears an explicit form of a linear-response coefficient which involves one-particle Green's functions and effective velocity operators encountered in a recent theory of electron transport. Application of this approach to ideal metal crystals yields more reliable values of the spin stiffness than traditional ill-convergent real-space lattice summations. The formalism can also be combined with the coherent potential approximation for an effective-medium treatment of random alloys, which leads naturally to an inclusion of disorder-induced vertex corrections to the spin stiffness. The calculated concentration dependence of the spin-wave stiffness of random fcc Ni-Fe alloys can be ascribed to a variation of the reciprocal value of alloy magnetization. Calculations for random iron-rich bcc Fe-Al alloys reveal that their spin-wave stiffness is strongly reduced owing to the atomic ordering; this effect takes place due to weakly coupled local magnetic moments of Fe atoms surrounded by a reduced number of Fe nearest neighbors.
The way doping affects the spin wave stiffness and the exchange stiffness of permalloy (Py) is investigated via ab-initio calculations, using the Korringa-Kohn-Rostoker (KKR) Green function formalism. By considering various types of dopants of different nature (V, Gd, and Pt), we are able to draw general conclusions. To describe the trends of the stiffness with doping is it sufficient to account for the exchange coupling between nearest neighbors. The polarizability of the impurities is not an important factor for the spin wave stiffness. Rather, the decisive factor is the hybridization betwee…
In a recent paper, the authors propose to separately calculate the volumetric and chemical contributions to the elastic stiffness coefficients of systems containing solutes, as it is "computationally more efficient". We show that this is not the case and further that their methodology and hence their results are incorrect. There is no short cut for performing the desired calculations, if done rigorously, as we show in our 2012 work.
Ab initio calculations of the spin wave stiffness constant $D$ for elemental Fe and Ni performed by different groups in the past have led to values with a considerable spread of 50-100 %. We present results for the stiffness constant $D$ of Fe, Ni, and permalloy Fe$_{0.19}$Ni$_{0.81}$ obtained by three different approaches: (i) by finding the quadratic term coefficient of the power expansion of the spin wave energy dispersion, (ii) by a damped real-space summation of weighted exchange coupling constants, and (iii) by integrating the appropriate expression in reciprocal space. All approaches ar…
This work proposes a new efficient approach for calculating the bending stiffness of two-dimensional materials using simple atomistic tests on small periodic unit cells. The tests are designed such that bending deformations are dominating and membrane deformations are minimized. Atomistic ab-initio simulations then allow for the efficient computation of bending energies. Density functional theory is used for this. Atomistic bending energies are then compared to classical models from structural mechanics. Two different models are considered for this -- one based on beam theory and one based on …
We report measurements of magnon spin transport in a spinel ferrite, magnesium aluminum ferrite $\mathrm{MgAl_{0.5}Fe_{1.5}O_4}$ (MAFO), which has a substantial in-plane four-fold magnetic anisotropy. We observe spin diffusion lengths $> 0.8$ $\mathrm{μm}$ at room temperature in 6 nm films, with spin diffusion length 30% longer along the easy axes compared to the hard axes. The sign of this difference is opposite to the effects just of anisotropy in the magnetic energy for a uniform magnetic state. We suggest instead that accounting for anisotropy in exchange stiffness is necessary to explain …
The impact of the inner structure and thermal history of planets on their observable features, such as luminosity or magnetic field, crucially depends on the poorly known heat and charge transport properties of their internal layers. The thermal and electric conductivities of different phases of water (liquid, solid, and super-ionic) occurring in the interior of ice giant planets, such as Uranus or Neptune, are evaluated from equilibrium ab initio molecular dynamics, leveraging recent progresses in the theory and data analysis of transport in extended systems. The implications of our findings …
We use ab initio density functional calculations to determine the interaction of a graphene monolayer with the Si(111) surface. We found that graphene forms strong bonds to the bare substrate and accommodates the 12% lattice mismatch by forming a wavy structure consisting of free-standing conductive ridges that are connected by ribbon-shaped regions of graphene, which bond covalently to the substrate. We perform quantum transport calculations for different geometries to study changes in the transport properties of graphene introduced by the wavy structure and bonding to the Si substrate. Our r…
We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic electron mobility, thermal conductivity and the Lorenz number. Impurity scattering is seen to suppress the drag-enhancement…
We examine the anisotropic properties of the exchange stiffness constant, $\mathcal{A}$, for rare-earth permanent magnet, Nd$_2$Fe$_{14}$B, by connecting analyses with two different scales of length, i.e., Monte Carlo (MC) method with an atomistic spin model and Landau-Lifshitz-Gilbert (LLG) equation with a continuous magnetic model. The atomistic MC simulations are performed on the spin model of Nd$_2$Fe$_{14}$B constructed from ab-initio calculations, and the LLG micromagnetics simulations are performed with the parameters obtained by the MC simulations. We clarify that the amplitude and the…
We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentra…
We carry out density-functional ab initio molecular dynamics (AIMD) simulations of Ti adatom (Tiad) migration on, and descent from, TiN <100>-faceted epitaxial islands on TiN(001) at temperatures T ranging from 1200 to 2400 K. Adatom-descent energy-barriers determined via ab initio nudged-elastic-band calculations at 0 Kelvin suggest that Ti interlayer transport on TiN(001) occurs essentially exclusively via direct hopping onto a lower layer. However, AIMD simulations reveal comparable rates for Tiad descent via direct-hopping vs. push-out/exchange with a Ti island edge atom for T >= 1500 K. W…
Over the last few years, $ab~initio$ methods have become an increasingly popular tool to evaluate intrinsic carrier transport properties in 2D materials. The lack of experimental information, and the progress made in the development of DFT tools to evaluate electronic band structures, phonon dispersions, and electron-phonon scattering matrix-elements, have made them a favored choice. However, a large discrepancy is observed in the literature among the $ab~initio$ calculated carrier mobility in 2D materials. Some of the discrepancies are a result of the physical approximations made in calculati…
An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transport simulator. We observe that vibrations are transferred microscopically from one layer to the other along the overlap region which acts as a filter selecting out the states that can pass through it. O…
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the p…
Transport properties of permalloy doped with V, Co, Pt, and Au are explored via ab-initio calculations. The Kubo-Bastin formula is evaluated within the fully relativistic Korringa-Kohn-Rostoker Green function formalism. Finite temperature effects are treated by means of the alloy analogy model. It is shown that the fact that the host is disordered and not crystalline has a profound effect on how the conductivities characterizing the anomalous Hall effect and the spin Hall effect depend on the dopant concentration. Several relationships between quantities characterizing charge and spin transpor…
In a theoretical study of gas adsorption on carbon nanotubes (CNT) nonequilibrium processes of ionization, polarization, surface diffusion and desorption of atoms are considered self-consistently. The approach is based on Zubarev's method of nonequilibrium statistical operator and reaction-diffusion theory. The set of nonlinear transport equations are obtained for the chosen parameters of description: the average numbers of adsorbed atoms, ionized and polarized atoms in the electromagnetic field of CNT, and the average number of atoms desorbed from the CNT surface. Ab initio simulations are co…
This work covers an ab initio calculation of thermodynamic, transport, and optical properties of plastics of the effective composition CH$_2$ at density 0.954 g/cm$^3$ in the temperature range from 5 kK up to 100 kK. The calculation is based on the quantum molecular dynamics, density functional theory and the Kubo-Greenwood formula. The temperature dependence of the static electrical conductivity $σ(T)$ has a step-like shape: $σ(T)$ grows rapidly for 5 kK <= $T$ <= 10 kK and is almost constant for 20 kK <= $T$ <= 60 kK. The additional analysis based on the investigation of the electron density…
We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexagonal elementary crystals is thermodynamically favored, but around and above room temperature random alloys are predicted to be stable. While hexagonal Si has an indirect band gap, the gap of hexagonal…
In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where using the Boltzmann equation with state-dependent RTs, we compute mobilities in excellent agreement with experiment at 250$-$500~K. The $e$-ph RTs and the phonon contributions to intravalley and intervalley $e$-ph scattering are also…
The current carried by a material subject to an electric field is microscopically inhomogeneous and can be modelled using scattering theory, in which electrons undergo collisions with the microscopic objects they encounter. We herein present a methodology for parameter-free calculations of the current density from first-principles using Density Functional Theory, Wannier functions and scattering matrices. The methodology is used on free-standing AB-stacked bilayer penta-silicene. This new Si allotrope has been proposed to have a higher stability than any of its hexagonal bilayer counterparts. …
Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. Here we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investi…
In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting re…
The calculations of electronic transport coefficients and optical properties require a very dense interpolation of the electronic band structure in reciprocal space that is computationally expensive and may have issues with band crossing and degeneracies. Capitalizing on a recently developed pseudo-atomic orbital projection technique, we exploit the exact tight-binding representation of the first principles electronic structure for the purposes of (1) providing an efficient strategy to explore the full band structure $E_n({\bf k})$, (2) computing the momentum operator differentiating directly …
First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtained by interpolation) and the dipole-like Fröhlich long-range coupling in polar materials, but lack important quadrupole effects for acoustic modes and PE materials. Here we derive and compute the lon…
Elemental 2D materials exhibit intriguing heat transport and phononic properties. Here we have investigated the lattice thermal conductivity of newly proposed arsenene, the 2D honeycomb structure of arsenic, using {\it ab initio} calculations. Solving the Boltzmann transport equation for phonons, we predict a highly anisotropic thermal conductivity, of $30.4$ and $7.8$ W/mK along the zigzag and armchair directions, respectively at room temperature. Our calculations reveal that phonons with mean free paths between $20$ nm and $1$ $μ$m provide the main contribution to the large thermal conductiv…
Pride, Prejudice, and Penury of {\it ab initio} transport calculations for single molecules
最近的进展，在测量单个分子的输运性质引发了大量的需求{ \it ab initio}输运计算。即使程序包是商业上可获得的，并放置在定制的，以解决这个任务，可靠的信息往往是困难的，并在绝大多数情况下，即当分子电导率远小于$e^2/h$非常耗时的获得。本文从含时密度泛函理论的观点概括了分子输运计算的步骤。重点是描述“标准方法”的基础。陷阱将被发现，并讨论适用的领域。
We report findings from several ab-initio, self-consistent calculations of electronic and transport properties of wurtzite aluminum nitride. Our calculations utilized a local density approximation (LDA) potential and the linear combination of Gaussian orbitals (LCGO). Unlike some other density functional theory (DFT) calculations, we employed the Bagayoko, Zhao, and Williams' method, enhanced by Ekuma and Franklin (BZW-EF). The BZW-EF method verifiably leads to the minima of the occupied energies; these minima, the low laying unoccupied energies, and related wave functions provide the most var…
Ab-initio transport theory for digital ferromagnetic heterostructures
由$δ$掺杂GaAs和Mn制成的MnAs/GaAs超晶格被称为数字铁磁异质结构。在这里，我们提出了一个理论密度泛函研究的电子，磁性和输运性质的异质结构。在没有本征施主的情况下，这些系统显示出半金属态密度，交换相互作用比具有相同Mn浓度的随机合金强得多。{ \it Ab initio}弹道输运计算表明，能量接近费米能级的载流子被强烈地限制在MnAs平面周围的几个单层内。这种强约束是大交换耦合的原因。因此，该系统可以被描述为一个二维半金属与大电导的MnAs平面和小电导的垂直方向。
The effect of the exchange-correlation potential in ab initio electron transport calculations is investigated by constructing optimized effective potentials (OEP) using different energy functionals or the electron density from second-order perturbation theory. We calculate electron transmission through two atomic chain systems, one with charge transfer and one without. Dramatic effects are caused by two factors: changes in the energy gap and the self-interaction error. The error in conductance caused by the former is about one order of magnitude while that caused by the latter ranges from seve…
We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account. The electronic band structure and average intervalley deformation potentials for the electron-phonon coupling are obtained from the density functional theory. The linearized Boltzmann equation has then been solved numerically beyond the relaxation time approximation. Our approach has been applied to crystalline silicon. We present results for the mob…
This work is devoted to the \textit{ab initio} calculation of transport and optical properties of aluminum. The calculation is based on the quantum molecular dynamics simulation, density functional theory and the Kubo-Greenwood formula. Mainly the calculations are performed for liquid aluminum at near-normal densities for the temperatures from melting up to 20000 K. The results on dynamic electrical conductivity, static electrical conductivity and thermal conductivity are obtained and compared with available reference and experimental data and the calculations of other authors. The influence o…
The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport properties so far rely on the deformation potential approximation, which is in general not directly applicable to anisotropic materials since the deformation along one specific direction can scatter electrons traveling in all directions. We perform a first-principles calculation of the electron-phonon interaction in phosphorene based on density functional perturbatio…
The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, a…
Effects of Fe substitution on the electronic, transport, and magnetic properties of ZnGa$_2$O$_4$: A systematic ab-initio study
采用密度泛函方法研究了Fe掺杂到宽禁带尖晶石ZnGa $_2$ O $_4$的四面体和八面体阳离子位的结构.我们计算了不同的取代的电子结构，并讨论了考虑不同近似的交换相关势的每种情况下的磁性和输运性质。我们表明，对于某些掺杂的情况下，获得的预测行为的显着差异取决于所采用的交换相关电位。概述了掺杂系统作为磁性半导体的可能应用。
Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). While these models offer valuable physical insights and accurate calculations of transport properties in some cases, they often lack sufficient accuracy -- particularly in capturing the correct trends …
We present an ab initio theory of transport quantities of metallic ferromagnets developed in the framework of the fully relativistic tight-binding linear muffin-tin orbital method. The approach is based on the Kubo-Streda formula for the conductivity tensor, on the coherent potential approximation for random alloys, and on the concept of interatomic electron transport. The developed formalism is applied to pure 3d transition metals (Fe, Co, Ni) and to random Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn). High values of the anisotropic magnetoresistance (AMR), found for Ni-rich alloys, ar…
We present an approach to calculate ballistic phonon transport that combines the atomistic Green's function (AGF) method with ab initio results. For the inter atomic potential we use the harmonic approach. The equilibrium positions of the atoms and the inter atomic force constants(ifcs) are calculated using the ABINIT program package, which is based on density functional theory. Therefore, the presented approach is parameter free. From the Green's function of the system we determine the density of states as well as the transmission function. The thermal conductance is obtained within the linea…
The excellent light yield proportionality of europium-doped strontium iodide (SrI$_2$:Eu) has resulted in state-of-the-art $γ$-ray detectors with remarkably high energy resolution, far exceeding that of most halide compounds. In this class of materials the formation of self-trapped hole polarons is very common. However, polaron formation is usually expected to limit carrier mobilities and has been associated with poor scintillator light-yield proportionality and resolution. Here, using a recently developed first-principles method, we perform an unprecedented study of polaron transport in SrI$_…
