We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D woodpile structures. We observe intense and broad reflectivity peak with stop bands that correspond to a broad gap in the photonic band structures. The maximum reflectivity quickly reaches high values even for a few crystal layers. Remarkably, the bandwidth of the stop bands hardly decreases with increasing crystal thickness, in good agreement with FDTD simulations. This behavior differs remarkably from the large changes observed earlier in weakly interacting 3D photonic crystals. The nearly constant bandwidth and high reflectivity are rationalized by multiple Bragg interference that occurs in strongly interacting photonic band gap crystals, whereby the incident light scatters from multiple reciprocal lattice vectors simultaneously, in particular from oblique ones that are parallel to a longer crystal dimension and thus experience hardly any finite size effects. Our new insights have favorable consequences for the application of 3D photonic band gap crystals, notably since even thin structures reveal the full band gap functionality, including devices that shield quantum bits from vacuum fluctuations.
The reflectivity of photonic cluster is important property for nanophotonic applications especially when one needs to hide the cluster or to make it extremely visible. Currently, where are no methods clearly describing how to create the photonic cluster with the predefined reflectivity. In this paper several analytical methods are proposed to create the photonic cluster with minimal or maximal reflectivity. The proposed methods are applicable for the clusters made of small particles.
The optimization of the light scattered by photonic cluster made of small particles is studied with the help of the local perturbation method and special optimization algorithm. It was shown that photonic cluster can be optimized in a such a way that its reflectivity will be increased or decreased by several orders of magnitude for selected wavelength and direction.
We demonstrate second harmonic generation at telecommunications wavelengths in L3 photonic crystal cavities in (111)-oriented GaAs. The second harmonic power from photonic crystal cavities fabricated in (111)-oriented GaAs is significantly increased compared to those fabricated in conventional (001)-oriented GaAs.
We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supporte…
We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes absorption of the second harmonic and two photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and farfield patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2 %/W in (001) and (111)B oriented GaAs.
We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift in the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the GaAs band edge. The probe transmission is modified for an estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.
We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{é}rot fringes related to…
We report an ultrafast optical tuning of the reflectivity of AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides using a reflection geometry, pump-probe technique.
We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to…
We demonstrate a new photo-induced oxidation technique for tuning GaAs photonic crystal cavities using a $390~\mathrm{nm}$ pulsed laser with an average power of $10~\mathrm{μW}$. The laser oxidizes a small $\left(\sim 500~\mathrm{nm}\right)$ diameter spot, reducing the local index of refraction and blueshifting the cavity. The tuning progress can be actively monitored in real time. We also demonstrate tuning an individual cavity within a pair of proximity-coupled cavities, showing that this method can be used to correct undesired frequency shifts caused by fabrication imperfections in cavity a…
We performed non-degenerate pump-probe experiments on a GaAs/AlAs photonic structure. We switched the photonic properties using the optical Kerr effect and free carriers excited by three photon absorption. From these measurements we extracted the non-degenerate Kerr coefficients over a broad wavelength range and we extracted the three photon absorption coefficient for GaAs at three wavelengths in the near infrared. We show that the optical Kerr effect is large enough to switch a cavity resonance with a high \emph{Q} ($Q>1000$) photonic cavity.
Nonlinear propagation experiments in GaAs photonic crystal waveguides (PCW) were performed, which exhibit a large enhancement of third order nonlinearities, due to light propagation in a slow mode regime, such as two-photon absorption (TPA), optical Kerr effect and refractive index changes due to TPA generated free-carriers. A theoretical model has been established that shows very good quantitative agreement with experimental data and demonstrates the important role that group velocity plays. These observations give a strong insight into the use of PCWs for optical switching devices.
We report on the structural and optical properties of individual bowtie nanoantennas both on glass and semiconducting GaAs substrates. The antennas on glass (GaAs) are shown to be of excellent quality and high uniformity reflected by narrow size distributions with standard deviations for the triangle and gap size of $σ_s^{glass}=4.5nm$ ($σ_s^{GaAs}=2.6nm$) and $σ_g^{glass}=5.4nm$ ($σ_g^{GaAs}=3.8nm$), respectively. The corresponding optical properties of individual nanoantennas studied by differential reflection spectroscopy show a strong reduction of the localised surface plasmon polariton re…
On-chip optical isolators play a key role in optical communications and computing based on silicon integrated photonic structures. Recently there have raised great attentions and hot controversies upon isolation of light via linear and passive photonic structures. Here we analyze the optical isolation properties of a silicon photonic crystal slab heterojunction diode by comparing the forward transmissivity and round-trip reflectivity of in-plane infrared light across the structure. The round-trip reflectivity is much smaller than the forward transmissivity, justifying good isolation. The consi…
Photonic crystal (PhC) membranes patterned with sub-wavelength periods offer a unique combination of high reflectivity, low mass, and high mechanical quality factor. We demonstrate a PhC membrane that we use as one mirror of a Fabry-Perot cavity with finesse as high as $F=35,000(500)$, corresponding to a record high PhC reflectivity of $R=0.999835(6)$. The fundamental mechanical frequency is 426 kHz, more than twice the optical linewidth, placing it firmly in the resolved-sideband regime. The mechanical quality factor in vacuum is $Q=1.1(1)\times 10^6$, allowing us to achieve values of the sin…
We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for experimental characterization of the waveguide. A topological interface state formed at the interface between two topologically-distinct VPhCs is used as the waveguide mode. We demonstrate robust propagation for near-infrared light emitted from the QDs even under the presence of sharp bends as a consequence of the topological protection of the guided mode. Our work will be of importance for developing robust photonic integrated circuits with small footprint…
The authors study the ultrafast switching-on and -off of planar GaAs/AlAs microcavities. Up to 0.8% refractive index changes are achieved by optically exciting free carriers at 1720 nm and a pulse energy of 1.8 micro Joules. The cavity resonance is dynamically tracked by measuring reflectivity versus time delay with tunable laser pulses, and is found to shift by as much as 3.3 linewidths within a few picoseconds. The switching-off occurs with a decay time of around 50 ps. The authors derive the dynamic behavior of the carrier density and of the complex refractive index. They propose that the i…
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trapping while being more robust under angle and thickness variations than simple photonic crystals. Here we experimentally demonstrate a light-trapping solution based on quasi-random photonic cr…
Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material syst…
We study the direction- and wavelength-dependent polarization anisotropy in light scattering at the air-photonic crystal interface as a function of angle of incidence for TE and TM polarized light. This is done using optical reflectivity measurements at high-symmetry points in the Brillouin zone of a three-dimensional photonic crystal with fcc symmetry. Polarized reflectivity measurements indicate the presence of stop gap branching for TE polarization, which is absent for TM polarization till the Brewster angle at K point. In contrast, stop gap branching is present for both TE and TM polarizat…
The identification of a complete three-dimensional (3D) photonic band gap in real crystals always employs theoretical or numerical models that invoke idealized crystal structures. Thus, this approach is prone to false positives (gap wrongly assigned) or false negatives (gap missed). Therefore, we propose a purely experimental probe of the 3D photonic band gap that pertains to many different classes of photonic materials. We study position and polarization-resolved reflectivity spectra of 3D inverse woodpile structures that consist of two perpendicular nanopore arrays etched in silicon. We obse…
We describe a semi-analytical approach for three-dimensional analysis of photonic crystal fibre devices. The approach relies on modal transmission-line theory. We offer two examples illustrating the utilization of this approach in photonic crystal fibres: the verification of the coupling action in a photonic crystal fibre coupler and the modal reflectivity in a photonic crystal fibre distributed Bragg reflector.
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index pla…
A GaAs/AlOx high contrast grating structure design which exhibits a 99.5% high reflectivity for a 425nm large bandwidth is reported. The high contrast grating (HCG) structure has been designed in order to enhance the properties of mid-infrared VCSEL devices by replacing the top Bragg mirror of the cavity. A robust optimization algorithm has been implemented to design the HCG structure not only as an efficient mirror but also as a robust structure against the imperfections of fabrication. The design method presented here can be easily adapted for other HCG applications at different wavelengths.
Circular dichroism covering the telecommunication band is experimentally demonstrated in a semiconductor-based three-dimensional chiral photonic crystal (PhC). We design a rotationally-stacked woodpile PhC structure where neighboring layers are rotated by 60 degrees and three layers construct a single helical unit. The mirror-asymmetric PhC made from GaAs with sub-micron periodicity is fabricated by a micro-manipulation technique. Due to the large contrast of refractive indices between GaAs and air, the experimentally obtained circular dichroism extends over a wide wavelength range, with the t…
The efficiency of evanescent coupling between a silica optical fiber taper and a silicon photonic crystal waveguide is studied. A high reflectivity mirror on the end of the photonic crystal waveguide is used to recollect, in the backwards propagating fiber mode, the optical power that is initially coupled into the photonic crystal waveguide. An outcoupled power in the backward propagating fiber mode of 88% of the input power is measured, corresponding to a lower bound on the coupler efficiency of 94%.
We demonstrate a method to locally control the temperature of photonic crystal devices via micron-scale electrical heaters. The method is used to control the resonant frequency of InAs quantum dots strongly coupled to GaAs photonic crystal resonators. This technique enables independent control of large ensembles of photonic devices located on the same chip at tuning speed as high as hundreds of kHz.
We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling efficiency of >60 %, a greatly suppressed back reflection of <1 % for the designed wavelength of 930 nm, and a 3-dB bandwidth of >43 nm. Highly efficient single-photon collection from embedded indium arsenide quantum dots to an optical fiber was realized with the designed grating, showing an average sixfold increase in photon count compared to commonly used ci…
Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides wit…
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the hig…
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as low as 645 nm at room temperature, with quality factors between 500 and 1700 for modes with volumes 0.7(lambda/n)^3. These structures could be employed for submicron scale optoelectronic devices in the visible, and for coupling to novel emitters with resonances in the visible such as nitrogen vacancy centers, and bio- and organic molecules.
We demonstrate fast (up to 20 GHz), low power (5 $μW$) modulation of photonic crystal (PC) cavities in GaAs containing InAs quantum dots. Rapid modulation through blue-shifting of the cavity resonance is achieved via free carrier injection by an above-band picosecond laser pulse. Slow tuning by several linewidths due to laser-induced heating is also demonstrated.
We demonstrate the effect of introducing controlled disorder in self-assembled three-dimensional photonic crystals. Disorders are induced through controlling the self-assembling process using an electrolyte of specific concentrations. Structural characterization reveals increase in disorder with increase in concentrations of the electrolyte. Reflectivity and transmittance spectra are measured to probe the photonic stop gap at different levels of disorder. With increase in disorder the stop gap is vanished and that results in a fully random photonic nanostructure where the diffuse scattered int…
We demonstrate the design, fabrication and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high quality factor modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.5 and up to an octave in theory). Such structures are crucial for efficient implementation of nonlinear frequency conversion. Here, we employ them to demonstrate sum frequency generation from 1300 nm and 1950 nm to 780 nm. These wavelengths are particularly interesting for quantum frequency conversion between Si vacancy centers in diamond and the fiber optic netw…
We develop a thermally tunable hybrid photonic platform comprising gallium arsenide (GaAs) photonic crystal cavities, silicon nitride (SiN$_x$) grating couplers and waveguides, and chromium (Cr) microheaters on an integrated photonic chip. The GaAs photonic crystal cavities are evanescently connected to a common bus waveguide, separating the computation and communication layers. The microheaters are designed to continuously and reversibly tune distant photonic crystal cavities to a common resonance. This architecture can be implemented in a coherent optical network for dedicated optical comput…
Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient
We present the design, the fabrication and the characterization of a tunable one-dimensional (1D) photonic crystal cavity (PCC) etched on two vertically-coupled GaAs nanobeams. A novel fabrication method which prevents their adhesion under capillary forces is introduced. We discuss a design to increase the flexibility of the structure and we demonstrate a large reversible and controllable electromechanical wavelength tuning (> 15 nm) of the cavity modes.
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonant…
We present ultrafast all-optical switching measurements of Si woodpile photonic band gap crystals. The crystals are spatially homogeneously excited, and probed by measuring reflectivity over an octave in frequency (including the telecom range) as a function of time. After 300 fs, the complete stop band has shifted to higher frequencies as a result of optically excited free carriers. The switched state relaxes quickly with a time constant of 18 ps. We present a quantitative analysis of switched spectra with theory for finite photonic crystals. The induced changes in refractive index are well de…
Using Fano-type guided resonances (GRs) in photonic crystal (PhC) slab structures, we numerically and experimentally demonstrate optical reflectivity enhancement of high-Q SiNx membrane-type resonators used in membrane-in-the-middle optomechanical (OM) systems. Normal-incidence transmission and mechanical ringdown measurements of 50-nm-thick PhC membranes demonstrate GRs near 1064 nm, leading to a ~ 4\times increase in reflectivity while preserving high mechanical Q factors of up to ~ 5 \times 10^6. The results would allow improvement of membrane-in-the-middle OM systems by virtue of increased…
We experimentally demonstrated high quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4-times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, we successfully observed a lasing oscillation from this cavity mode.
Spherical colloids arranged in a crystalline order are known to produce structural colors. The intensity and brilliance of such photonic crystals require high size-monodispersity of the colloids, a low number of lattice defects and disorder, as well as a relatively large refractive index contrast between the scattering colloids and the continuous background. Here we present the unexpected photonic properties of aqueous suspensions of charge-stabilized, 186 nm large, fluorinated colloids with a refractive index of 1.37. Employing reflectivity, optical observation, small angle x-ray scattering m…
We demonstrate a simple and rapid epoxy-based method for transferring photonic crystal cavities to the facets of optical fibers. Passive Si cavities were measured via fiber taper coupling as well as direct transmission from the fiber facet. Active quantum dot containing GaAs cavities showed photoluminescence that was collected both in free space and back through the original fiber. Cavities maintain a high quality factor (2000-4000) in both material systems. This new design architecture provides a practical mechanically stable platform for the integration of photonic crystal cavities with macr…
By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operating wavelength (e.g. that of a low-noise laser or emitter) is not tunable, imposing tolerances on crystal geometry that are not reliably achieved with standard nanolithography. Here we present a gentle technique to finely tune the resonant wavelength of a SiN PCR using iterative hydrofluoric acid etches. With little optimization, we achieve a 57-nm-t…
The spectacular success of silicon-based photonic integrated circuits (PICs) in the past decade naturally begs the question of whether similar fabrication procedures can be applied to other material platforms with more desirable optical properties. In this work, we demonstrate the individual passive components (grating couplers, waveguides, multi-mode interferometers and ring resonators) necessary for building large scale integrated circuits in suspended gallium arsenide (GaAs). Implementing PICs in suspended GaAs is a viable route towards achieving optimal system performance in areas with str…
The quantum nature of light-matter interactions in a circularly polarized vacuum field was probed by spontaneous emission from quantum dots in three-dimensional chiral photonic crystals. Due to the circularly polarized eigenmodes along the helical axis in the GaAs-based mirror-asymmetric structures we studied, we observed highly circularly polarized emission from the quantum dots. Both spectroscopic and time-resolved measurements confirmed that the obtained circularly polarized light was influenced by a large difference in the photonic density of states between the orthogonal components of the…
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analyzed. The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commo…
We present light transmission measurements and frequency-delay reflectometry maps for GaAs photonic crystal membranes, which show the transition from propagation with a well defined group velocity to a regime completely dominated by disorder-induced coherent scattering. Employing a self-consistent optical scattering theory, with only statistical functions to describe the structural disorder, we obtain an excellent agreement with the experiments using no fitting parameters. Our experiments and theory together provide clear physical insight into naturally occurring light localization and multipl…
