As a high-order quantum transition, two-photon emission has an extremely low occurrence rate compared to one-photon emission, thus having been considered a forbidden process. Here, we propose a scheme that allows ultrafast two-photon emission, leveraging highly confined surface plasmon polariton modes in a degenerately-doped, light-emitting semiconductor thin film. The surface plasmon polariton modes are tailored to have simultaneous spectral and spatial overlap with the two-photon emission in the semiconductor. Using degenerately-doped InSb as the prototype material, we show that the two-photon emission can be accelerated by 10 orders of magnitude: from tens of milliseconds to picoseconds, surpassing the one-photon emission rate. Our result provides a semiconductor platform for ultrafast single and entangled photon generation, with a tunable emission wavelength in the mid-infrared.
In a semiconductor-based double quantum well (QW) coupled to a degree of freedom with an internal dynamics, we demonstrate that the electronic motion is controllable within femtoseconds by applying appropriately shaped electromagnetic pulses. In particular, we consider a pulse-driven AlxGa1-xAs based symmetric double QW coupled to uniformly distributed or localized vibrational modes and present analytical results for the lowest two levels. These predictions are assessed and generalized by full-fledged numerical simulations showing that localization and time-stabilization of the driven electron…
We use one single, few-picosecond-long, variably polarized laser pulse to deterministically write any selected spin state of a quantum dot confined dark exciton whose life and coherence time are six and five orders of magnitude longer than the laser pulse duration, respectively. The pulse is tuned to an absorption resonance of an excited dark exciton state, which acquires non-negligible oscillator strength due to residual mixing with bright exciton states. We obtain a high fidelity one-to-one mapping from any point on the Poincaré sphere of the pulse polarization to a corresponding point on th…
Dirac Fermion, which is the low energy collective excitation near the Dirac cone in monolayer graphene, have gained great attention by low energy Terahertz probe. In the case of undoped graphene, it has been generally understood that the ultrafast terahertz thermal relaxation is mostly driven by the electron-phonon coupling (EOP), which can be prolonged to tens and hundreds of picoseconds. However, for the high doped graphene, which manifests the negative photoinduced terahertz conductivity, there is still no consensus on the dominant aspects of the cooling process on a time scale of a few pic…
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
We use an open-aperture Z-scan technique to show how intense few-cycle terahertz pulses can experience a nonlinear bleaching of absorption in an n-doped semiconductor due to terahertz-electric-field-driven intervalley scattering of electrons in the conduction band. Coherent detection of the transmitted terahertz pulse waveform also allows the nonlinear conductivity dynamics to be followed with sub-picosecond time resolution. Both the Z-scan and time-domain results are found to be in agreement with our theoretical analysis.
Heavily doped semiconductors have emerged as tunable low-loss plasmonic materials at mid-infrared frequencies. In this article we investigate nonlinear optical phenomena associated with high concentration of free electrons. We use a hydrodynamic description to study free electron dynamics in heavily doped semiconductors up to third-order terms, which are usually negligible for noble metals. We find that cascaded third-harmonic generation due to second-harmonic signals can be as strong as direct third-harmonic generation contributions even when the second-harmonic generation efficiency is zero.…
We describe a two-color pump-probe scanning magneto-optical Kerr effect (MOKE) microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast `white light' supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an in…
We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schrödinger equation (TDSE). The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about 1 to 3 orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy band structure and the time-dependent population imaging. Our work indicates that doping can effectively control the HHG in semiconductor.
We propose surface modulation of the equilibrium charge density as a technique to control and enhance, via an external static potential, the free electron nonlinear response of heavily doped semiconductors. Within a hydrodynamic perturbative approach, we predict a two order of magnitude boost of free electron third-harmonic generation.
We report on the design and whole characterization of low-noise and affordable-cost Yb-doped double-clad fiber amplifiers operating at room temperature in the near-infrared spectral region at pulse repetition rate of 160 MHz. Two different experimental configurations are discussed. In the first one, a broadband seed radiation with a transform limited pulse duration of 71 fs, an optical spectrum of 20 nm wide at around 1040 nm, and 20 mW average power is adopted. In the second configuration, the seed radiation is constituted by stretched pulses with a time duration as long as 170 ps, with a 5-n…
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fields above 60 kV/cm, which continue up to the maximum investigated peak field of 430 kV/cm. At the highest fields we estimate a carrier multiplication factor greater than 10 due to impact ionization, …
We predict here that a slab made of a doped semiconductor can exhibit anomalous refraction under the application of a static magnetic field. This anomalous refraction takes place in the far-infrared range and it occurs for any angle of incidence. We show that this effect is due to the fact that a doped semiconductor under a magnetic field can behave, to some extent, as a hyperbolic metamaterial. We also show that the occurrence of this anomalous refraction enables a semiconductor slab under a magnetic field to partially focus the electromagnetic radiation. The remarkable thing in our case is t…
The ability to dynamically steer fs pulses from a monolithically integrated source is a critical milestone for the fields of nanophotonics and ultrafast optics. The nascent field of reconfigurable metasurfaces -- made of optically resonant meta-atoms -- has shown great promise in manipulating light-matter interactions through subwavelength control of the phase, amplitude, and polarization of light. These active metasurfaces arbitrarily transform an incident wavefront using a reconfigurable spatial phase profile and thus have been limited to manipulating coherent external sources. Light emittin…
Next-generation communication networks require > Tbit/s single-channel data transfer and processing with sub-picosecond switches and routers at network nodes. Materials enabling ultrafast all-optical switching have high potential to solve the speed limitations of current optoelectronic circuits. Chromoproteins have been shown to exhibit a fast light-controlled refractive index change much larger than that induced by the optical Kerr effect due to a purely electronic nonlinearity, alleviating the driving energy requirements for optical switching. Here, we report femtosecond transient grating ex…
Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart optoelectronics, catalysis, and sensing. Here, we elucidate fundamental aspects of LSPR modulation through dynamic carrier density tuning in Sn-doped Indium Oxide NCs. Monodisperse Sn-doped Indium Ox…
Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limi…
Metasurfaces control optical wavefronts via arrays of nanoscale resonators laid out across a surface. When combined with III-V semiconductors with strong optical nonlinearities, a variety of nonlinear effects such as harmonic generation and all optical modulation can be enabled and enhanced at the nanoscale. This review presents our research on engineering and boosting nonlinear effects in ultrafast and nonlinear semiconductor metasurfaces fabricated at the Center for Integrated Nanotechnologies (CINT). We cover our recent works on parametric generation of harmonic light via direct and cascade…
We describe an ultrafast time resolved pump-probe spectroscopy setup aimed at studying the switching of nanophotonic structures. Both fs pump and probe pulses can be independently tuned over broad frequency range between 3850 and 21050 cm$^{-1}$. A broad pump scan range allows a large optical penetration depth, while a broad probe scan range is crucial to study strongly photonic crystals. A new data acquisition method allows for sensitive pump-probe measurements, and corrects for fluctuations in probe intensity and pump stray light. We observe a tenfold improvement of the precision of the setu…
We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-exciton, the pump pulse excites electrons and holes far away from the K valleys in the first Brillouin zone. Electron-phonon and hole-phonon scattering lead to a gradual relaxation of the carriers towa…
We study in this work the near-field radiative heat transfer between two semi-infinite parallel planes of highly n-doped semiconductors. Using a nonlocal model of the dielectric permittivity, usually used for the case of metallic planes, we show that the radiative heat transfer coefficientsaturates as the separation distance is reduced for high doping concentration. These results replace the 1/d${}^2$ infinite divergence obtained in the local model case. Different features of the obtained results are shown to relate physically to the parameters of the materials, mainly the doping concentration…
