空位缺陷对固体高次谐波产生的影响
Influence of vacancy defects in solid high-order harmonic generation
摘要：
本文讨论了空位缺陷对固体高次谐波产生的影响。高次谐波谱的总能量截止随空位缺陷浓度的增加而增加，总谱逐渐转变为单一的倾斜谱，而在一次和二次平台之间没有突变。与纯固体中的谐波相比，具有空位缺陷的固体中的带隙以下谐波的光谱强度显著增强。谐波谱的变化是根据其有效能带结构来理解的。空位缺陷的存在局部地破坏了单位晶胞的平移对称性。因此，出现了新的缺陷态，为电子动力学打开了额外的路径。在伽柏轮廓中的不好分辨的电子轨迹证实了附加路径的干扰。此外，与对应于具有诸如欠掺杂或过掺杂的缺陷的固体的高阶谐波光谱相比，单个倾斜的高阶谐波光谱携带空位缺陷的独特特征。
英文摘要：
The present work discusses the impact of vacancy defects in solid high-order harmonic generation. The total energy cutoff of the high-order harmonic spectrum increases as a function of concentration of vacancy defects, and the total spectrum gradually turns into a single slanted spectrum without having an abrupt transition between primary and secondary plateaus. The spectral intensity of the below-band-gap harmonics in a solid with vacancy defects is enhanced significantly in comparison to the harmonics in a pristine solid. The changes in the harmonic spectra are understood in terms of their effective band structures. The presence of vacancy defects breaks the translational symmetry of the unit cell locally. As a consequence of this, new defect states appear, which open additional paths for the electron dynamics. The ill-resolved electron trajectories in the Gabor profile confirm the interference of additional paths. Moreover, the single slanted high-order harmonic spectrum carries a unique signature of vacancy defects in comparison to the high-order harmonic spectrum corresponding to solids with defects such as underdoping or overdoping.
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