Electrical and optical properties of hydrated amorphous vanadium oxide

UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy

Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a smooth S-type characteristic and have a temperature-dependent device resistance characterised by an activation energy of 0.25 eV, consistent with conduction in polycrystalline VO2, while for high-compliance currents they exhibit an abrupt snap-back characteristic and a resistance characterised by an activation energy of 0.025 eV, consistent with co…

Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method

Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 C and 2) 550-600 C. The obtained films demonstrate the m…

非晶VO$_x$薄膜：通过金属V的反应性电子束蒸发生长并具有高电阻率温度系数

Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal

本文提出在约$10^{-4}$ mBar氧气氛下通过反应性电子束蒸发金属钒，低温生长无滞回相变的非晶VO$_x$薄膜，其TCR可通过氧压调节至-2.2%/K且长期稳定，适用于电阻温度计和微测辐射热计。