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arXiv 2001.01320cond-mat.mtrl-sci
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无补偿Fe/CoO(111)界面原子粗糙度对交换偏置效应的影响

Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect

Rui Wu, Mingzhu Xue, Tuhin Maity, Yuxuan Peng, Samir Kumar Giri, Guang Tian, Judith L. MacManus-Driscoll, Jinbo Yang

摘要:

铁磁层和反铁磁层的界面粗糙度对交换偏置的影响还没有很好的理解。在这份报告中,我们研究了(111)取向的反铁磁CoO薄膜的表面粗糙度对交换偏置的影响,铁磁Fe生长在顶部。通过改变CoO膜的层厚度,在原子尺度下,在低于~ 0.35 nm的范围内控制表面粗糙度。结果表明,交换偏置场($H_{E}$)和介电常数($H_{C}$)都与CoO(111)与Fe膜界面处的原子尺度粗糙度密切相关.发现了$H_{E}$和$H_{C}$对界面粗糙度的相反依赖关系,这归因于完全未补偿的CoO(111)表面原子粗糙度诱导的部分补偿自旋态,并使用蒙特卡罗模拟得到了证实。此外,$H_{C}$的起始温度被发现是高达80 K以下的阻断温度($T_{B}$)和$H_{C}$的温度依赖性遵循幂律与临界指数等于一,这表明,在这个系统中,$H_{C}$是更多的接口相关的属性比$H_{E}$。

英文摘要:

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer thickness of the CoO films. It is observed that both exchange bias field ($H_{E}$) and coercivity ($H_{C}$) extensively depend on the atomic scale roughness of the CoO (111) at the interface with Fe film. An opposite dependence of $H_{E}$ and $H_{C}$ on interface roughness was found, which was ascribed to partially compensated spin states induced by the atomic roughness at the fully uncompensated CoO (111) surfaces and was corroborated using the Monte Carlo simulations. Moreover, the onset temperature for $H_{C}$ is found to be up to ~ 80 K below the blocking temperature ($T_{B}$) and the temperature dependence of $H_{C}$ follows the power law with a critical exponent equal to one, which indicates that, in this system, $H_{C}$ is more of an interface-related property than $H_{E}$.

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