arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2001.00096cond-mat.mes-hall
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六方氮化硼包覆石墨烯中的公度和非公度双云纹干涉

Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Nicolas Leconte, Jeil Jung

摘要:

由六方氮化硼(BN)封装的石墨烯(G)的双莫尔图案的干涉可以改变初级/次级狄拉克点附近的电子结构特征以及由单个G/BN莫尔图案引入的电子-空穴对称性,这取决于顶部/底部BN层的相对堆叠布置。我们发现,强干涉效应被发现在近对齐的BN/G/BN和BN/G/NB,并获得作为莫尔超晶格扭曲角的函数的相关态密度的演化。对于相等的莫尔周期和具有$Δϕ= 0^{\circ}$模$60^{\circ}$角度差的相称图案,图案可以相长地相加,从而在空穴侧上产生约$\sim 0.5$ eV的大赝隙,或者根据它们的相对滑动而相消地抵消,例如部分地恢复电子-空穴对称性。$Δϕ=30^{\circ}$差异的云纹准晶体的电子结构揭示了几乎孤立的van Hove奇点的状态密度的双云纹功能,我们可以预期强相关。

英文摘要:

Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with $Δϕ= 0^{\circ}$ modulo $60^{\circ}$ angle differences the patterns can add up constructively leading to large pseudogaps of about $\sim 0.5$ eV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for $Δϕ=30^{\circ}$ differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.

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