基于接入区电阻的GFET非对称传输响应分析
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
摘要：
石墨烯基器件计划用于增强射频（RF）电子学中Si和III-V基技术的功能。设计具有增强RF性能的石墨烯{场效应}晶体管（GFET）的期望已经吸引了大量的实验努力，主要集中在实现高迁移率样品上。然而，很少有人注意到，到目前为止，在这些设备中的访问区域的作用。\mbox{Here, we analyse}详细地，通过数值模拟，GFET传输响应如何受到这些区域的严重影响，表明它们在GFET中通常观察到的不对称饱和行为中起着重要作用。我们还研究了接入区电导率的调制（即，通过背栅的影响）和石墨烯层中存在缺陷（例如，电荷坑）影响转移响应。分析扩展到评估的应用GFET的RF应用，通过~评估其截止频率。
英文摘要：
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. \mbox{Here, we analyse} in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by~evaluating their cut-off frequency.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
