1 $T$ $_{2}$的室温二维铁磁性
Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$
摘要：
使用二维（2D）范德华（vdW）材料作为平台的自旋相关电子学被认为具有革命性的下一代自旋电子学的巨大希望。尽管在具有自旋长程有序的二维电子系统中已经发现了许多新的现象，但迄今为止还没有报道的室温磁性vdW材料阻碍了相关的应用。在这里，我们表明，内在的铁磁性对齐的自旋极化可以保持高达316 K的金属相1 $T$ -CrTe $_{2}$在几层的限制。这种室温二维长程自旋相互作用可能是有益的巡回增强。自旋输运测量表明，在几层CrTe $_{2}$中存在负的室温各向异性磁电阻（AMR），但在较低温度下AMR的符号发生变化，在300 K时为-0.6 $\%$，在10 K时为+5 $\%$.这一现象可能源于CrTe $_{2}$特殊的自旋极化能带结构。我们的研究结果提供了深入了解磁性的几层碲化铬$_{2}$，这表明未来的室温自旋电子应用的2D VDW磁铁的潜力。
英文摘要：
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.
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