Arising from the interplay between charge, spin and orbital of electrons, spin-orbit torque (SOT) has attracted immense interest in the past decade. Despite vast progress, the existing quantification methods of SOT still have their respective restrictions on the magnetic anisotropy, the entanglement between SOT effective fields, and the artifacts from the thermal gradient and the planar Hall effect, etc. Thus, accurately characterizing SOT across diverse samples remains as a critical need. In this work, with the aim of removing the afore-mentioned restrictions, thus enabling the universal SOT quantification, we report the characterization of the sign and amplitude of SOT by angular measurements. We first validate the applicability of our angular characterization in a perpendicularly magnetized Pt/Co-Ni heterostructure by showing excellent agreements to the results of conventional quantification methods. Remarkably, the thermoelectric effects, i.e., the anomalous Nernst effect (ANE) arising from the temperature gradient can be self-consistently disentangled and quantified from the field dependence of the angular characterization. The superiority of this angular characterization has been further demonstrated in a Cu/CoTb/Cu sample with large ANE but negligible SOT, and in a Pt/Co-Ni sample with weak perpendicular magnetic anisotropy (PMA), for which the conventional quantification methods are not applicable and even yield fatal error. By providing a comprehensive and versatile way to characterize SOT and thermoelectric effects in diverse heterostructures, our results pave the important foundation for the spin-orbitronic study as well as the interdisciplinary research of thermal spintronic.
Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons
非均匀应变硅与金属双层结构中，弯电子掺杂与拓扑声子的叠加导致声子的拓扑电子磁性。在铁磁金属和Si双层结构的情况下，挠曲电子掺杂也将产生更大的自旋电流，这将导致由于声子的拓扑电子磁性而导致的大的自旋到电荷转换。通过在施加的应变梯度下向铁磁金属/Si双层结构施加温度差，可以产生大的热电响应。在这项实验研究中，我们报告了一个大的自旋相关的热电响应在Ni 80 Fe 20/Si双层结构。自旋相关的响应被发现是一个数量级大于Pt薄膜和类似的拓扑绝缘体表面状态，尽管可以忽略不计的内在自旋轨道耦合的Si。这种大的响应归因于声子的挠曲电子掺杂和拓扑电子磁性，这是使用拓扑能斯特效应测量发现的。这种使用非均匀应变工程来解决自旋电流密度和自旋到电荷转换的替代和新颖的方法可以为使用金属和掺杂半导体层状材料实现自旋电子学和自旋热电子学器件打开新的窗口。
Dominant spin Hall torque and negligible orbital Hall torque in α-W/ferromagnet heterostructures with artifacts-free angular momentum detectors
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所半导体物理与芯片技术国家重点实验室）；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences（中国科学院大学材料科学与光电工程技术研究中心）；College of Physics and Information Technology, Shaanxi Normal University（陕西师范大学物理学与信息技术学院）
Nanomechanical Detection of Itinerant Electron Spin Flip
自旋是一种固有的量子性质，其特征在于角动量。自旋状态的变化相当于角动量或机械扭矩的变化。这种自旋感应力矩在从测量光子的角动量、金属的g因子和磁共振到磁性多层膜中的磁化反转的实验中被称为内在机制。引入到纳米线中的自旋极化电流产生与巡游电子自旋翻转相关的力矩。在这里，我们报告的直接测量这种机械扭矩和巡回电子自旋极化在一个集成的纳米扭转振荡器，这可能会产生新的信息巡回的d-带电子。10^{-22} N m/ \sqrt{Hz}的前所未有的扭矩灵敏度可以使自旋电子学、CP破坏力的精确测量、DNA的解扭和扭矩产生分子的应用成为可能。
Eindhoven University of Technology（埃因霍温理工大学）；University of Fribourg（弗里堡大学）；Okinawa Institute of Science and Technology Graduate University（冲绳科学技术大学院大学）；Paul Scherrer Institut（保罗谢尔研究所）
Angular Modulations in Magnetic Torque Induced by Phase Transitions in the Triangular Supersolid $2H$-AgNiO$_2$
University of Oxford（牛津大学）；Harvard John A. Paulson School of Engineering and Applied Sciences（哈佛大学约翰·A·保尔森工程与应用科学学院）；Florida State University（佛罗里达州立大学）；Max-Planck-Institut fur Festkörperforschung（马克斯·普朗克固体研究所）
