Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors
A. Juillard, J. Billard, D. Chaize, J-B Filippini, D. Misiak, L. Vagneron, A. Cavanna, Q. Dong, Y. Jin, C. Ulysse, A. Bounab, X. de la Broise, C. Nones, A. Phipps
备注：
submitted to Journal of Low Temperature Physics, special issue for the 18th International Workshop on Low Temperature Detectors 22-26 July 2019 - Milano, Italia
We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and current noises has been developed with frequency dependence up to 1 MHz. These HEMTs exhibit low dissipation, excellent noise performance and can advantageously replace traditional Si-JFETs for the readout of high impedance thermal sensor and semiconductor ionization cryogenic detectors. Our model predicts that cryogenic germanium detectors of 30 g with 10 eV heat and 20 eVee baseline resolution are feasible if read out by HEMT based amplifiers. Such resolution allows for high discrimination between nuclear and electron recoils at low threshold. This capability is of major interest for Coherent Elastic Neutrino Scattering and low-mass dark matter experiments such as Ricochet and EDELWEISS.
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures
Ultrafast supercontinuum fiber-laser based pump-probe scanning MOKE microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution
A microwave SQUID multiplexing concept for macro-cryogenic calorimeter arrays
Università di Milano-Bicocca（米兰比可卡大学）；INFN, Sezione di Milano-Bicocca（意大利国家核物理研究所米兰比可卡分部）；National Institute of Standards and Technology（美国国家标准与技术研究院）；University of Colorado（科罗拉多大学）
Frequency stability of cryogenic silicon cavities with semiconductor crystalline coatings
采用低温参考腔的现有技术的光学振荡器在性能上受到与反射镜涂层的机械耗散相关联的布朗热噪声的限制。最近，结晶Al $_{1-x}$ Ga $_{x}$ As/GaAs涂层已成为改善涂层热噪声的有希望的候选者。我们测量了两个全结晶的低温参考腔的频率噪声，该参考腔具有Al $_{0.92}$ Ga $_{0.08}$ As/GaAs光学涂层。我们报告先前未测量的双折射噪声与反相关的频率波动之间的偏振模式的结晶涂层，并确定变量，影响其大小。比较两个低温参考腔之间的双折射噪声揭示了一组现象学的缩放与腔内功率和模式面积。我们实现了一个询问方案，消除了这两个偏振模式的同时探测噪声。这种消除后剩余的残余噪声大于两个腔的热噪声限制，但仍低于先前测量的等效谐振器与介电涂层的不稳定性。虽然这些新的噪声机制的来源还不清楚，我们证明，晶体涂层可以提供稳定性和灵敏度的谐振器采用介电涂层的竞争力。
