用瞬态极紫外光谱区分Si（100）的Δ、L和Γ谷中的光激发载流子和声子动力学
Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy
摘要：
瞬态极紫外（XUV）光谱探测芯能级跃迁到未占用的价带和导带状态。不确定性仍然是什么程度的核心空穴所产生的XUV跃迁修改光激发电子和空穴能量的测量。在此，在电子光激发到Si（100）的Δ、L和Γ谷之后测量Si {λ_{2，3}}边缘。在XUV跃迁几率的测量变化不积极同意增加电子光激发能量。因此，实验数据证实，对于Si {Si_{2，3}}边缘，依赖于时间的电子和空穴能量部分地被芯-空穴扰动所掩盖。基于多体近似和Bethe-Salpeter方程的模型被成功地用于预测核心-空穴{ \apos }在电子和结构动力学方面对最终跃迁态密度的修改。得到的拟合时间常数匹配的激发态电子热化时间和谷间电子-声子，谷内电子-声子，声子-声子散射时间先前在硅中测量。概述的方法是一个更全面的框架，解释瞬态XUV吸收光谱在光激发半导体。
英文摘要：
Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole created by the XUV transition modifies the measurement of photoexcited electron and hole energies. Here, the Si {Ł_{2,3}} edge is measured after photoexcitation of electrons to the Δ, L, and Γ valleys of Si(100). The measured changes in the XUV transition probability do not energetically agree with the increasing electron photoexcitation energy. The data therefore experimentally confirm that, for the Si {Ł_{2,3}} edge, the time-dependent electron and hole energies are partially obscured by the core-hole perturbation. A model based on many-body approximations and the Bethe-Salpeter equation is successfully used to predict the core-hole{\apos}s modification of the final transition density of states in terms of both electronic and structural dynamics. The resulting fit time constants match the excited state electron thermalization time and the inter-valley electron-phonon, intra-valley electron-phonon, and phonon-phonon scattering times previously measured in silicon. The outlined approach is a more comprehensive framework for interpreting transient XUV absorption spectra in photoexcited semiconductors.
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