p型Ge晶体上热诱导固相再生长Al制备p+接触
Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal
摘要：
在锗上形成p+接触对于二极管检测器和其他电子器件的应用是重要的。在这项工作中，热沉积的Al在Ge晶体在350 ℃退火，然后缓慢冷却的固态再生长的Al-Ge p+接触的Ge上。利用二次离子质谱（SIMS）进行深度剖面分析，以研究Al和Ge沿再生长Al-Ge层深度的赋存状态。观察到的再生长的证据，由于跨层的Ge和Al的相互扩散，虽然Ge扩散在Al层中被发现是更普遍的。改变蒸发的Al层的厚度以了解Al、Ge的扩散分布并估计Al在下面的Ge晶体中的结合深度。在Al-Ge再生长层不同深度处的霍尔测量表明，Al杂质在p型Ge中诱导p+掺杂，其浓度向Ge晶体方向逐渐降低。Al-Ge层的顶表面表现出最低的薄层电阻，该薄层电阻随所沉积的Al层的厚度而变化。
英文摘要：
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of Al-Ge p+ contact on Ge. Depth profile analysis by secondary ion mass spectrometry (SIMS) is carried out to investigate the occurrence of Al and Ge along the depth of the regrown Al-Ge layer. Evidence of regrowth is observed due to inter-diffusion of both Ge and Al across the layers although Ge diffusion in Al layer is found to be more prevalent. Thickness of the evaporated Al layer is varied to understand the diffusion profile of Al, Ge and estimate the depth of Al incorporation in Ge crystal underneath. Hall measurement at different depth of Al-Ge regrown layer reveals that Al impurity induces p+ doping in p-type Ge and its concentration gradually reduces towards the Ge crystal. Top surface of the Al-Ge layer exhibits lowest sheet resistance that varies with the thickness of the as deposited Al layer.
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