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arXiv 1908.02543cond-mat.str-el
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Si中自旋三重态双电子量子点的预测:磁性系统的受控量子模拟

Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems

D. Miserev, O. P. Sushkov

摘要:

在单谷材料如GaAs中的双电子量子点的基态总是自旋单态,而不管势和相互作用是什么。这种说法不能推广到像$n$掺杂的Si这样的多谷材料。本文数值计算了双电子Si量子点的能谱,表明横向尺寸为几nm的量子点可以具有自旋三重态基态,这在单谷材料中是不可能的。预测的双电子Si量子点中的单重态-三重态能级交叉可能为基于量子点的磁性多体系统的量子模拟奠定基础。我们提出了几个这样的系统的例子,开辟了一条道路,控制量子模拟内的凝聚态设置。

英文摘要:

Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like $n$-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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