氢化六方氮化硼陶瓷的介电谱
Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics
摘要：
六方氮化硼（h-BN）是用于石墨烯的2D电子器件的关键材料，并且由于其结构相似性和半导体性质而吸引了相当多的关注。然而，修改其宽带隙是一个挑战。氢化是一种改变电性能的潜在方法，尽管很少进行实验测量。在这里，已经研究了各种氢处理后的h-BN的复介电常数。对于未处理的h-BN，测量了与频率无关的介电常数（$\sim4.2 \pm0.2$）和不可测量的低介电损耗，证明了h-BN在$10^3$至$10^{10}$ Hz范围内的理想介电性质。然而，在微波化学气相沉积（CVD）反应器中的原子H-等离子体处理之后，复介电常数显著放大，通过Debye型介电弛豫（$\varepsilon_{\textrm{s}}\approx20\pm2$、$\varepsilon_{\infty}\approx4.2\pm0.2$）引入介电色散和放大的长程电导率（$\sim0.32$ mS/m）。在类似的CVD温度下在分子氢中退火显示出最小的影响。拉曼光谱还检测到所有样品中的最小变化，这意味着增加不是由于其他阶段。这导致实验结论，氢化，通过原子H-等离子体处理，导致室温电导率，相关的有限介电损耗因子的适度增加。作为可调谐宽带隙半导体的潜力是突出的，然而对于绝缘介质衬底应用，微波CVD可能会破坏这些理想的性能。
英文摘要：
Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex permittivity of h-BN after various hydrogen treatments have been investigated. For untreated h-BN, a frequency independent dielectric constant was measured ($\sim4.2 \pm0.2$) and an immeasurably low dielectric loss, demonstrating the ideal dielectric nature of h-BN across the $10^3$ to $10^{10}$ Hz range. However, after atomic H-plasma treatment in a microwave chemical vapour deposition (CVD) reactor, the complex permittivity amplifies dramatically, introducing dielectric dispersion through Debye-type dielectric relaxations ($\varepsilon_{\textrm{s}}\approx20\pm2$, $\varepsilon_{\infty}\approx4.2\pm0.2$) and a percolating long range conductivity ($\sim0.32$ mS/m). Annealing in molecular hydrogen at similar CVD temperatures showed minimal effect. Raman spectroscopy also detected minimal change in all samples, implying the increase is not due to other phases. This leads to the experimental conclusion that hydrogenation, through atomic H-plasma treatment, results in a moderate increase in room temperature electrical conductivity, an associated finite dielectric loss factor. The potential as a tunable wide-band gap semiconductor is highlighted however for insulating dielectric substrate applications, microwave CVD may destroy these desirable properties.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
