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arXiv 1906.05992cond-mat.mtrl-scicond-mat.mes-hall
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二维极性材料扭曲双层膜中的平带

Flat Bands in Twisted Bilayers of Two-Dimensional Polar Materials

Xing-Ju Zhao, Yang Yang, Dong-Bo Zhang, Su-Huai Wei

摘要:

布洛赫平坦带的存在为实现材料中的强关联现象提供了一条便捷的途径。利用密度泛函理论和紧束缚方法,我们证明了在六方氮化硼($h$ BN)的扭曲双层膜中可以形成平带。然而,与其中需要魔角来形成平带的扭曲石墨烯双层不同,对于极性$h$ BN,只要扭曲角小于某些临界值,平带就可以出现。我们的模拟结果表明,价带最大(导带最小)状态主要驻留在莫尔超晶格的区域,其中两层中的阴离子N(阳离子B)原子彼此重叠。这些价态和导电状态的优先本地化起源于N和B之间的化学电势差,并通过N和B在两个层中的堆叠效应分别增强,如通过分析具有不同堆叠图案的$h$ BN双层膜的能级顺序所证明的。当这些状态在空间上局域化时,因为具有特定堆叠图案的区域在足够小的扭曲角下对于莫尔超晶格是孤立的,将形成完全平坦的带。这一机制也适用于其他二维极性晶体的扭曲双层膜。

英文摘要:

The existence of Bloch flat bands provides an facile pathway to realize strongly correlated phenomena in materials. Using density-functional theory and tight-binding approach, we show that the flat bands can form in twisted bilayer of hexagonal boron nitride ($h$BN). However, unlike the twisted graphene bilayer where a magic angle is needed to form the flat band, for the polar $h$BN, the flat bands can appear as long as the twisted angle is less than certain critical values. Our simulations reveal that the valence band maximum (conduction band minimum) states are predominantly resided in the regions of the moiré supperlattice where the anion N (cation B) atoms in both layers are on top of each other. The preferential localization of these valence and conduction states originate from the chemical potential difference between N and B and is enhanced by the stacking effects of N and B in both layers, respectively, as demonstrated by an analysis of the energy level order of the $h$BN bilayers with different stacking patterns. When these states are spatially localized because regions with a specific stacking pattern are isolated for moiré supperlattices at sufficient small twist angle, completely flat bands will form. This mechanism is applicable to other twisted bilayers of two-dimensional polar crystals.

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