六方氮化硼中的选择性缺陷形成
Selective Defect Formation in Hexagonal Boron Nitride
摘要：
六方氮化硼（hBN）中的发光缺陷中心由于其高亮度和室温下稳定的工作而成为一种有前途的二维单光子发射源。创建具有良好定义的光学特性的这种发射器的能力是将其集成到片上光子架构中的基石。在这里，我们报告了一种有效的方法来制造hBN单光子发射器（SPE）在两个孤立的光谱区域通过操作硼扩散通过铜在大气压化学气相沉积（APCVD）-一个过程中，我们长期吸杂所需的发射性能。使用吸杂技术，我们确定性地将所得到的零声子线（ZPL）放置在550-600 nm或600-650 nm的区域之间，为hBN SPE在宽光谱范围内具有定制的发射特性铺平了道路。我们在hBN生长过程中控制缺陷形成的能力提供了一种简单且具有成本效益的方法来提高CVD hBN薄膜的结晶度，并且降低了缺陷密度，使其适用于hBN生长的广泛应用。我们的研究结果对于理解hBN中量子发射体的缺陷形成并将其用于可扩展的光子技术具有重要意义。
英文摘要：
Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.
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