InSb量子阱的面内磁导映射
In-Plane Magnetoconductance Mapping of InSb Quantum Wells
摘要：
研究了含二维电子气的InSb量子阱的面内磁导特性。使用矢量磁铁，我们创建了一个磁导图，显示了抑制弱反定位（WAL）作为一个功能的应用领域。通过拟合2DEG的面内场响应，我们估计材料无序和g因子作为晶体方向的函数。发现面内WAL抑制主要由塞曼效应控制，并且在无序和g因子中显示出小的晶体取向依赖的各向异性。这些测量显示了多方向测量磁导在分析材料性质中的实用性。
英文摘要：
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. The in-plane WAL suppression is found to be dominated by the Zeeman effect and to show a small crystal-orientation-dependent anistropy in disorder and g-factor. These measurements show the utility of multi-directional measurement of magnetoconductance in analyzing material properties.
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