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arXiv 1902.07028quant-ph
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用于离子阱量子计算机的集成$^{9}$ Be $^{+}$多量子位门器件

Integrated $^{9}$Be$^{+}$ multi-qubit gate device for the ion-trap quantum computer

Henning Hahn, Giorgio Zarantonello, Marius Schulte, Amado Bautista-Salvador, Klemens Hammerer, Christian Ospelkaus

摘要:

我们演示了利用嵌入表面电极离子阱中的微波导体发射的微波近场,在$^9$ Be $^+$离子中实现磁场不敏感超精细跃迁的两量子比特Mølmer-Sørensen门的实验。导体的设计被优化以在离子位置处产生高振荡磁场梯度。测得的栅极保真度被确定为$98.2\pm1.2\,\%$,并受到技术缺陷的限制,这是由一个全面的数值误差分析证实。导体设计可以潜在地简化多量子比特门的实现,并且代表用于离子阱量子计算机的量子CCD架构内的纠缠门的自包含的可扩展模块。

英文摘要:

We demonstrate the experimental realization of a two-qubit Mølmer-Sørensen gate on a magnetic field-insensitive hyperfine transition in $^9$Be$^+$ ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be $98.2\pm1.2\,\%$ and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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