热剩磁辅助开关响应
Thermo-remnant magnetization assisted switching response
摘要：
在这里，我们描述的原型精确缩放的温度辅助磁纪录计划利用的特点，热剩余磁化（TRM）在体SmCrO $_3$作为存储介质。TRM响应可以在完全可逆的双极开关性能中利用，或者通过仅在尖锐的热窗口$ΔT_w$ = 10 K上调谐温度，或者通过将磁化方向从0 $^o$翻转到180 $^o$来用场$\ge$ 0.1 T的单个脉冲等温退火。本文用高能$λ= 0.4997Å$中子的漫散射和$T_N \pm ΔT$范围内的热变研究了SmCrO $_3$中TRM的微观机制。发现微观自旋组态涨落的平均自旋-自旋相关长度估计值为$\le$ 90 $Å$，缺陷尺寸约为畴壁宽度的2倍时，有效的畴壁钉扎效应反映了SmCrO $_3$中TRM的巨大不均匀性.
英文摘要：
Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can be exploited in completely reversible bipolar switching performances either by tuning the temperature only across a sharp thermal window $ΔT_w$ = 10 K, or annealing isothermally with a single pulse of field $\ge$ 0.1 T by flipping the direction of magnetization from 0$^o$ to 180$^o$. The microscopic mechanism of TRM in SmCrO$_3$ is explored by means of diffuse scattering using high energy $λ= 0.4997Å$ neutrons and thermal variation of coercivity in $T_N \pm ΔT$ range. It is noticed that the huge heterogeneity reflected by the estimated average spin-spin correlation length of the fluctuations in microscopic spin configuration being $\le$ 90 $Å$ and efficient domain wall pinning effect as the defect dimensions are approximately twice to the domain wall width, governs the peculiar characteristic of TRM in SmCrO$_3$.
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