拓扑边界材料铋表面电子结构的温度驱动修饰
Temperature-driven modification of surface electronic structure on bismuth, a topological border material
摘要：
单晶铋具有非常接近拓扑相变的特殊电子结构。用角分辨光电子能谱学（ARPES）研究了温度对Bi表面态的影响。在低温下，表面态的上分支合并到表面布里渊区（SBZ）的$\bar{M}$点周围的投影体导带。相反，在高温（400 K）下，相同的分支合并到投影的体价带。这种行为可以解释为温度驱动的拓扑相变，这可能适用于未来的自旋热电器件。我们讨论了引起这种转变的可能机制，如晶格热畸变和电子-声子耦合。
英文摘要：
Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.
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