层状金属二硫属化合物的电子态
Configurational Electronic States in Layered Metallic Dichalcogenides
摘要：
介观不规则有序，甚至无定形的自组装电子结构最近报道在二维金属二硫属化物（TMD），创建和操纵短的光脉冲或电荷注入。除了有前途的新的全电子存储器件，这种状态是非常重要的，因为这种非周期性的状态不能描述在传统的电荷密度波（CDW）物理。在本文中，我们解决的问题，亚稳介观电荷有序的TMD与稀疏填充的电荷格子气模型，其中电子只受到屏蔽库仑排斥。该模型正确地预测相应于不同的TMD在魔术填充分数$f_m=1/3,1/4,1/9,1/13,1/16$的相称CDW状态。远离$f_m$的掺杂会导致多个近简并构型状态，或者通过扫描隧道显微镜观察到正确密度的非晶态。简并态之间的量子涨落预言了低温下的量子电荷液体，揭示了过渡金属二硫族化合物中规则、不规则和无定形电荷有序的新观点。
英文摘要：
Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising new all-electronic memory devices, such states are of great fundamental importance, since such aperiodic states cannot be described in terms of conventional charge-density-wave (CDW) physics. In this paper we address the problem of metastable mesoscopic configurational charge ordering in TMDs with a sparsely filled charged lattice gas model in which electrons are subject only to screened Coulomb repulsion. The model correctly predicts commensurate CDW states corresponding to different TMDs at magic filling fractions $f_m=1/3,1/4,1/9,1/13,1/16$. Doping away from $f_m$ results either in multiple near-degenerate configurational states, or an amorphous state at the correct density observed by scanning tunnelling microscopy. Quantum fluctuations between degenerate states predict a quantum charge liquid at low temperatures, revealing a new generalized viewpoint on both regular, irregular and amorphous charge ordering in transition metal dichalcogenides.
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