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arXiv 1409.7341cond-mat.str-el
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过渡金属二硫属化合物的轨道织构和电荷密度波

Orbital textures and charge density waves in transition metal dichalcogenides

T. Ritschel, J. Trinckauf, K. Koepernik, B. Büchner, M. v. Zimmermann, H. Berger, Y. I. Joe, P. Abbamonte, J. Geck

摘要:

低维电子系统,如在石墨烯中自然实现的或在异质结构的界面处人工创建的,展现出各种迷人的量子现象,具有巨大的应用前景。一旦电子被限制在低维度,它们也倾向于通过形成所谓的密度波自发地打破底层核晶格的对称性;由于其与各种非常规电子性质的关系,这种物质状态目前吸引了巨大的关注。在这项研究中,我们揭示了一个显着的和令人惊讶的特点,电荷密度波(CDW),即它们的密切关系的轨道秩序。对于原型材料1 T-TaS 2,我们不仅表明二维TaS 2层内的CDW涉及以前未识别的轨道纹理非常复杂。我们还表明,两个亚稳态堆叠的轨道有序层允许操纵的电子结构的显着特征。事实上,这些轨道效应能够将1 T-TaS 2纳米结构的性质从金属性切换到半导体性,其技术相关的间隙为200 meV。这种新型的轨道电子学与基于层状过渡金属二硫属化物的新型、小型化和超快器件的持续开发特别相关。

英文摘要:

Low-dimensional electron systems, as realized naturally in graphene or created artificially at the interfaces of heterostructures, exhibit a variety of fascinating quantum phenomena with great prospects for future applications. Once electrons are confined to low dimensions, they also tend to spontaneously break the symmetry of the underlying nuclear lattice by forming so-called density waves; a state of matter that currently attracts enormous attention because of its relation to various unconventional electronic properties. In this study we reveal a remarkable and surprising feature of charge density waves (CDWs), namely their intimate relation to orbital order. For the prototypical material 1T-TaS2 we not only show that the CDW within the two-dimensional TaS2-layers involves previously unidentified orbital textures of great complexity. We also demonstrate that two metastable stackings of the orbitally ordered layers allow to manipulate salient features of the electronic structure. Indeed, these orbital effects enable to switch the properties of 1T-TaS2 nanostructures from metallic to semiconducting with technologically pertinent gaps of the order of 200 meV. This new type of orbitronics is especially relevant for the ongoing development of novel, miniaturized and ultra-fast devices based on layered transition metal dichalcogenides.

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