实现水平纳米线场效应晶体管的短高质量环栅结构
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
摘要：
介绍了一种环栅纳米线场效应晶体管的制作方法。使用抗蚀剂-沟槽对准技术将单个纳米线垂直于下面的底栅对准。然后，顶栅被限定为与底栅对准，以形成栅全包围结构。该方法克服了在先前的水平卷绕栅极纳米线晶体管中由于栅极由湿法蚀刻限定而出现的最小可获得栅极长度和栅极长度控制的显著限制。在这里提出的方法中，栅极长度控制受到电子束光刻工艺的分辨率的限制。我们证明了我们的方法的多功能性，通过制造一个独立的底栅，顶栅，和栅极全包围结构的设备，以及一个设备与三个独立的栅极全包围结构与300 nm，200 nm，和150 nm的栅极长度。我们的方法使我们能够实现亚阈值摆幅低至38 mV/dec在77 K的150 nm的栅极长度。
英文摘要：
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length.
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