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arXiv 2009.01288physics.app-ph
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纳米线等离子体激元Laser结构的全外延制备

All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure

Michael A. Mastro, Jaime A. Freitas, Jennifer K. Hite, Charles R. Eddy

摘要:

采用全外延方法制备了由铝等离子体金属/ SiNx电介质/ InGaN量子阱壳包围p-GaN纳米线芯的同轴等离子体激光器结构。从垂直排列的纳米线阵列和转移到透明载体晶片上的水平排列的纳米线中观察到强的紫外线发光。

英文摘要:

An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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