通过G掺杂获得的纳米结构p-p（v）结
Nanostructured p-p(v) junctions obtained by G-doping
摘要：
最近，周期性硅纳米结构中几何诱导的量子效应被引入并观察到。纳米光栅化已被证明是几何诱导掺杂或G掺杂的起源。G掺杂基于量子态密度的降低并且是n型的。本文报道了基于G掺杂的补偿型p-p（v）结的制备和表征。引入p-p（v）缩写是为了强调G掺杂水平的电压依赖性。p型Si晶片用于样品制造。首先，在晶片表面形成两个方形岛。接着，整个Si表面被氧化以生长薄的SiO2绝缘层。在SiO2中打开两个窗口，并在其中一个窗口内使用激光干涉光刻然后通过反应离子蚀刻制造纳米光栅。在p型衬底和纳米光栅层之间形成G掺杂的p-p（v）结。接下来，在两个岛上沉积金属接触以测量p-p（v）结的电特性。为了排除接触电阻输入范德堡法使用。获得的I-V曲线是二极管型的，具有极低的正向压降和减小的反向电流。实验测得的I-V曲线符合Shockley方程，理想因子在0.2-0.14之间。如此低的值证实了p-p（v）结与传统的pn结有根本的不同。这种差异归因于G掺杂，与常规掺杂不同，G掺杂依赖于外部电压。
英文摘要：
Recently, geometry-induced quantum effects in periodic Si nanostructures were introduced and observed. Nanograting has been shown to originate geometry induced doping or G-doping. G-doping is based on reduction of density of quantum states and is n-type. Here, fabrication and characterization of G-doping based compensated p-p(v) junctions is reported. The p-p(v) abbreviation is introduced to emphasize voltage dependence of G-doping level. The p-type Si wafer is used for sample fabrication. First, two square islands are shaped at the surface of the wafer. Next, entire Si surface is oxidized to grow thin SiO2 insulating layer. Two windows are opened in SiO2 and nanograting is fabricated inside one of the windows using laser interference lithography followed by reactive ion etching. G-doping p-p(v) junction between p-type substrate and the nanograting layer is formed. Next, metal contacts are deposited on both islands to measure electrical characteristics of p-p(v) junction. To exclude contact resistance input Van der Pauw method is used. Obtained I-V curves are diode type with extremely low voltage drop in forward direction and reduced reverse current. Experimental I-V curves are fitted to the Shockley equation and ideality factor is found to be in the range of 0.2-0.14. Such a low values confirm that p-p(v) junction is fundamentally different from the conventional p-n junction. This difference is ascribed to G-doping which, unlike conventional doping, is external voltage dependent.
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