陡坡FeFETs中瞬态负电容的建模
Modeling Transient Negative Capacitance in Steep-Slope FeFETs
摘要：
我们报告的测量和建模的FE HfZrO/SiO2铁电介质（FE-DE）FET，这表明许多现象归因于负电容可以解释由铁电畴切换的延迟响应-称为瞬态负电容（TNC）。不需要穿过稳定的负电容支路。建模用于将铁电材料的滞后特性与所测量的瞬态和亚阈值斜率（SS）行为相关联。据发现，陡峭的SS可以被理解为一种瞬态现象，存在时发生显着的偏振变化。TNC的实验签名进行了研究，并概述了在测量数据中检测它的指导方针。FE极化开关的技术含义进行了研究，它被发现，NCF依赖于它不适合高性能CMOS逻辑，由于电压，频率和滞后的限制。总结了稳定S曲线行为的实验证据要求。
英文摘要：
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be explained by a delayed response of ferroelectric domain switching - referred to as Transient Negative Capacitance (TNC). No traversal of the stabilized negative capacitance branch is required. Modeling is used to correlate the hysteretic properties of the ferroelectric material to the measured transient and subthreshold slope (SS) behavior. It is found that steep SS can be understood as a transient phenomenon, present when significant polarization changes occur. The experimental signature of TNC is investigated, and guidelines for detecting it in measured data are outlined. The technological implications of FE polarization switching are investigated, and it is found that NCFETs relying on it are not suitable for high performance CMOS logic, due to voltage, frequency, and hysteresis limitations. Requirements for experimental evidence of stabilized S-curve behavior are summarized.
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