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arXiv 1808.08682physics.optics
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等离子体金属与相变材料的相互扩散

Inter-diffusion of Plasmonic Metals and Phase Change Materials

Li Lu, Weiling Dong, Jitendra K. Behera, Li Tian Chew, Robert E. Simpson

摘要:

本文研究了金属原子扩散到相变硫族化物中的问题,这会破坏光子器件中的共振。利用X射线反射率(XRR)和金属-Ge_2Sb_2Te_5叠层的反射测量研究了Ge_2Sb_2Te_5和金属层之间的界面。金属原子的扩散影响相变材料的结晶温度和光学性质。当Au、Ag、Al、W结构直接沉积在Ge_2Sb_2Te_5上时,发生互扩散。事实上,Au在界面处形成AuTe 2层。扩散阻挡层,如Si 3 N4或稳定的无扩散等离子体材料,如TiN,可以防止界面损伤。研究表明,在设计相变材料调谐的光子器件时,必须考虑界面扩散,TiN是最适合与Ge 2Sb 2 Te 5直接界面的等离子体材料。

英文摘要:

This work investigates the problematic diffusion of metal atoms into phase change chalcogenides, which can destroy resonances in photonic devices. Interfaces between Ge2Sb2Te5 and metal layers were studied using X-ray reflectivity (XRR) and reflectometry of metal-Ge2Sb2Te5 layered stacks. The diffusion of metal atoms influences the crystallisation temperature and optical properties of phase change materials. When Au, Ag, Al, W structures are directly deposited on Ge2Sb2Te5 inter-diffusion occurs. Indeed, Au forms AuTe2 layers at the interface. Diffusion barrier layers, such as Si3N4 or stable diffusionless plasmonic materials, such as TiN, can prevent the interfacial damage. This work shows that the interfacial diffusion must be considered when designing phase change material tuned photonic devices, and that TiN is the most suitable plasmonic material to interface directly with Ge2Sb2Te5.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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