利用原子轨道工程实现金属-石墨烯结的超低比接触电阻
Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
摘要：
提供了石墨烯边缘接触的系统调查。有意地在接触区域处图案化单层石墨烯产生了良好限定的边缘接触，其导致来自金接触的电流注入增强67%。接触电阻率从表面接触器件的1372 Ωm降低到用孔图案化接触时的456 Ωm。石墨烯的静电掺杂进一步将接触电阻率从519 Ωm降低到45 Ωm，大幅降低了91%。实验结果的支持和理解，通过多尺度的数值模型，基于密度泛函理论计算和运输模拟。分析数据的边缘周长和孔与石墨烯的比率，这提供了对优化的接触几何形状的见解。因此，目前的工作表明一种可靠的和可重复的方法，用于制造低电阻接触的石墨烯器件。我们提供了一个简单的接触设计指南，可用于指导石墨烯和2D材料接触工程。
英文摘要：
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 Ωm for a device with surface contacts to 456 Ωm when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 Ωm to 45 Ωm, a substantial decrease of 91%. The experimental results are supported and understood via a multi-scale numerical model, based on density-functional-theory calculations and transport simulations. The data is analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices. We provide a simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering.
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