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arXiv 1806.09753cond-mat.str-elcond-mat.mes-hall
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二维电子气第二朗道能级的有限温度行为

Finite Temperature Behavior in the Second Landau Level of the Two-dimensional Electron Gas

V. Shingla, E. Kleinbaum, A. Kumar, L. N. Pfeiffer, K. W. West, G. A. Csathy

摘要:

在GaAs/AlGaAs中电子气的第二朗道能级中,在$ν=2+3/5$、$2+3/7$、$2+4/9$、$2+5/9$、$2+5/7$和$2+5/8$处的磁阻的弱局部最小值的报告留下了在这些填充因子下分数量子霍尔态的可能性。在一个高质量的样品中,我们发现,磁电阻表现出这些感兴趣的填充因子附近的特殊功能。然而,这些特征不能与分数量子霍尔态相关联;相反,它们源于电子泡相的磁阻指纹。我们发现只有两个例外:在$ν=2+2/7$和$2+5/7$中,有证据表明在中间温度下存在初始分数量子霍尔态。当温度降低时,这些分数量子霍尔态由于与气泡相的相竞争而崩溃。

英文摘要:

Reports of weak local minima in the magnetoresistance at $ν=2+3/5$, $2+3/7$, $2+4/9$, $2+5/9$, $2+5/7$, and $2+5/8$ in the second Landau level of the electron gas in GaAs/AlGaAs left open the possibility of fractional quantum Hall states at these filling factors. In a high quality sample we found that the magnetoresistance exhibits peculiar features near these filling factors of interest. These features, however, cannot be associated with fractional quantum Hall states; instead they originate from magnetoresistive fingerprints of the electronic bubble phases. We found only two exceptions: at $ν=2+2/7$ and $2+5/7$ there is evidence for incipient fractional quantum Hall states at intermediate temperatures. As the temperature is lowered, these fractional quantum Hall states collapse due to a phase competition with bubble phases.

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