在SiGe中为RPC的电子学前端设计了一个TDC，用于高速实验
Design a TDC in SiGe for RPC's electronics Front-end for the use in a high-rate experiment
摘要：
使用新一代RPC，可以处理数百个$μV$的感应信号，因此前端电子器件是检测器的重要和精密部分，以便获得可检测的信号。电子链是由一个放大器，一个ADC，一个TDC。新的前端是实现与硅锗（SiGe）元件的使用，由IHP微电子公司提供。利用这种技术，我们可以在同一芯片上实现BJT和CMOS晶体管。这种改进的好处是最小化：通道的功率消耗（$2 ÷3$ $ \frac{mW}{ch}$）、噪声（500 $e^-$ r.m.s）、辐射硬度（10 kGy，$10^3$ $\frac{n}{cm}$），并且它最大化响应电子器件的速度。在这项工作中，我将强调第一TDC原型的结果。TDC使用本地振荡器，其具有在$0.6 ÷3 $ GHz之间的振荡范围和15 ps的时间抖动。TDC输出的数据以二进制表示，以减轻采集系统的数据处理。此外，我们正在研究一种最大限度地减少系统延迟的方法。此优化包括添加串行化器（PISO），该串行化器将TDC数据输出以2 GHz发送到采集系统。
英文摘要：
With the new generation of the RPC, it is possible to work with induced signals of hundreds $μV$, hence the front-end electronics is an important and delicate part of the detector in order to get a detectable signal. The electronic chain is made up of an amplifier, a discriminator, a TDC. The new front-end is realized with the use of silicon-germanium (SiGe) components, provided by IHP microelectronics. With this technology we can implement BJT and CMOS transistors on the same chip. The benefit of this improvement is to minimize: power consumption of the channels ($2 ÷3$ $ \frac{mW}{ch}$), noise (500 $e^-$ r.m.s), radiation hardness (10 kGy,$10^3$ $\frac{n}{cm}$) and it maximizes the speed of response electronics. In this work I will highlight the first TDC prototypes' results. The TDC uses a local oscillator, that has an oscillation range between $0.6 ÷3 $ GHz, and a the temporal jitter of 15 ps. The data output from the TDC are presented in binary in order to lighten data processing to the acquisition system. Moreover, we are studying a way to minimize system latency. This optimization involves the addition of a serializer (PISO) that sends the TDC data output to the acquisition system at 2 GHz.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
