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arXiv 1806.01795cond-mat.str-el
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弱量子化磁场中SiGe/Si/SiGe量子阱的分数量子霍尔效应

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

摘要:

实验研究了SiGe/Si/SiGe量子阱在相对较弱的磁场中的分数量子霍尔效应,其中电子间的库仑相互作用超过回旋分裂的几个XX倍。对应于复合费米子的量子霍尔效应,观察到纵向电阻的最小值,量子数$p$ = 1,2,3和4。$p$ = 3的极小值在低于7特斯拉的磁场中消失,这可能是复合费米子的量子能级与赝自旋的不同取向相交甚至合并的结果,即,属于不同的山谷。我们还观察到在填充因子$ν$ = 4/5和4/11时纵向电阻的最小值,这可能是由于第二代复合费米子的形成。

英文摘要:

We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $ν$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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