30 GHz压控振荡器工作在4 K
30 GHz-voltage controlled oscillator operating at 4 K
摘要：
固态量子比特的操作和读出能力正在达到容错，但量子纠错需要数百万个物理量子比特，因此需要一个可扩展的量子计算机架构。为了解决信号线带宽和扇出问题，量子位操作所需的微波源可能会嵌入量子位芯片附近，通常在低于4 K的温度下工作。在这里，我们执行的第一个低温测量的130纳米BiCMOS基于SiGe压控振荡器。该设备保持其功能从300 K到4 K。我们确定了频率和输出功率对温度和磁场的依赖关系，最高可达5 T，并测量了温度对噪声性能的影响。虽然输出功率趋于增加，但对于温度和场依赖性，频移分别为3%和0.02%，两者都与高度相干的自旋量子比特应用相关。我们没有观察到输出噪声的改善，但增加了输出闪烁。
英文摘要：
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator. The device maintains its functionality from 300 K to 4 K. We determined the dependence of frequency and output power on temperature and magnetic field up to 5 T and measured the temperature influence on noise performance. While the output power tends to increase, the frequency shift is 3 % for temperature and 0.02 % for the field dependence, respectively, both relevant for highly coherent spin qubit applications. We observe no improvement on output noise, but increased output flickering.
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