Room temperature deposition of superconducting Niobium Nitride films by ion beam assisted sputtering
Tomas Polakovic, Sergi Lendinez, John E. Pearson, Axel Hoffmann, Volodymyr Yefremenko, Clarence L. Chang, Whitney Armstrong, John Arrington, Kawtar Hafidi, Gora… 展开作者
Tomas Polakovic, Sergi Lendinez, John E. Pearson, Axel Hoffmann, Volodymyr Yefremenko, Clarence L. Chang, Whitney Armstrong, John Arrington, Kawtar Hafidi, Goran Karapetrov, Valentine Novosad
We use room temperature ion beam assisted sputtering (IBAS) to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures, X-ray diffraction and atomic force microscopy. Compared to reactive sputtering of NbN, films sputtered in presence of an ion beam show remarkable increase in the superconducting critical temperature T$_{\rm{c}}$, while exhibiting lower sensitivity to nitrogen concentration during deposition. Thickness dependence of the superconducting critical temperature is comparable to films prepared by conventional methods at high substrate temperatures and is consistent with behavior driven by quantum size effects or weak localization.
We report on magnetoresistance oscillations in superconducting NbNx nanowires synthesized through ammonia gas annealing of NbSe3 precursor nanostructures. Even though the transverse dimensions of the nanowires are much larger than the superconducting coherence length, the voltage-current characteristics of these nanowires at low temperatures are reminiscent of one-dimensional superconductors where quantum phase slips are associated with the origin of dissipation. We show that both the magnetoresistance oscillations and voltage-current characteristics observed in this work result from the granu…
Structure and composition tunable superconductivity, band topology and elastic response of hard binary niobium nitrides Nb$_2$N, Nb$_4$N$_3$ and Nb$_4$N$_5$
We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an Atomic Force Microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridges. The magnetic field dependence of the maximum supercurrent Ic(flux) in resulting SQUIDs is thoroughly measured for different weak link geometries and for both tested materials. It is found that the m…
The influence of the buffer layer of hafnia dielectric on superconducting properties of niobium nitride films, produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensive analysis of morphological, microstructural, and electrophysical parameters of thin NbN films.
Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the lattice structure of the superconducting material to change its intrinsic properties. The process will allow us to directly pattern devices and potentially improve the quality of the nanowires. To achieve this, we used the ion beam from a scanning helium ion microscope (HIM) to localize damage on a superconducting material to create a nanowire. Two experiment…
We have fabricated ultrafast dark count-free soft X-ray single-photon detectors (X-SNSPDs) from TaN with various conduction path widths, and we compare their properties with corresponding data from a Nb X-SNSPD. The TaN X-SNSPDs offer an improved detector performance regarding device detection efficiency, latching and pulse amplitudes. Wide conduction paths allow for a certain energy-resolving capability in contrast to narrow TaN conduction paths. However, wide paths also limit the detection efficiency at low temperatures, which can be explained within a hot-spot model.
We demonstrate and characterize first superconducting nanowire single-photon detectors (SNSPDs) made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nm-thick nanowire detectors. A 100 nm-wide straight nanowire with a le…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow evaporation for the final device fabrication. The subgap conductance of these devices exhibit a strong temperature dependence, rendering them suitable for thermometry from $\sim$ 0.1 K all the way up to the superconducting transition temperature of the NbN layer, which was here $\sim 11$ K, but could be extended up to $\sim 16$ K in our PLD chamber. Our data fits w…
The superconducting critical temperature (Tc > 15K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100mm diameter) and a large target (127 mm x 444.5 mm). This article focuses on maximizing the Tc of the films an…
We present a comprehensive study of molybdenum nitride (MoN) thin film deposition using direct current (DC) reactive magnetron sputtering. We have investigated the effect of various deposition conditions on the superconducting and electrical properties of the films. Furthermore, we have shown that meander-shaped single-photon detectors made from 5 nm MoN films have saturated quantum detection efficiency at the telecom wavelength of 1550 nm. Our results indicate that MoN may be a material of interest for practical applications of low-temperature superconductors, including single-photon detector…
We present an experimental study of KIDs fabricated of atomic layer deposited TiN films, and characterized at radiation frequencies of $350$~GHz. The responsivity to radiation is measured and found to increase with increasing radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride / aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power (NEP) improves with higher radiation powers, also opposite to what is observed and well understood for hybrid…
Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrate…
Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. In this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal-air interface which prevents such oxidation. X-ray photoelectron spectroscopy confirms the doping of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization sh…
A niobium titanite nitride-based superconducting nanodevice in which the Josephson critical current can be modulated by a gate voltage - a Cooper-pair transistor - has proven a remarkably long parity lifetime exceeding one minute at temperatures close to absolute zero.
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice m…
We characterize inductors fabricated from ultra-thin, approximately 100 nm wide strips of niobium (Nb) and niobium nitride (NbN). These nanowires have a large kinetic inductance in the superconducting state. The kinetic inductance scales linearly with the nanowire length, with a typical value of 1 nH/um for NbN and 44 pH/um for Nb at a temperature of 2.5 K. We measure the temperature and current dependence of the kinetic inductance and compare our results to theoretical predictions. We also simulate the self-resonant frequencies of these nanowires in a compact meander geometry. These nanowire …
We report on terahertz frequency-domain spectroscopy (THz-FDS) experiments in which we measure charge carrier dynamics and excitations of thin-film superconducting systems at low temperatures in the THz spectral range. The characteristics of the set-up and the experimental procedures are described comprehensively. We discuss the single-particle density of states and a theory of electrodynamic absorption and optical conductivity of conventional superconductors. We present the experimental performance of the setup at low temperatures for a broad spectral range from 0.1 - 1.1 THz by the example o…
The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K f…
Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than pr…
Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material beyond pure electrostatics. Conversely, reversible, volatile and electrostatic modulation is pivotal in the reliable design and operation of novel device concepts enabled by the ultrahigh induced charge densities attainable via ionic gating. Here we demonstrate a simple and effective method to achieve reversible and volatile gating of surface-sensitive ultrat…
We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric down conversion, where one of photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as $4\times 10^4$ in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times 10^{15}\,\mathrm{cm}^{-2}$ in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within …
Rock-salt type niobium nitride ($δ$-NbN) is a well-known superconductor having superconducting transition temperature (Tc) $\approx$ 18\,K and a large superconducting gap $\approx$3\,meV. The Tc of $δ$-NbN thin film exhibits a large scattering irrespective of the growth conditions and lattice parameter. In this work, we investigate the atomic origin of suppression of Tc in $δ$-NbN thin film by employing combined methods of experiments and ab-initio simulations. Sputtered $δ$-NbN thin films with different disorder were analyzed through electrical resistivity and x-ray absorption spectroscopy. A…
