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arXiv 1803.01656cond-mat.mes-hall
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界面自旋轨道场矢量的电场修正

Electric-field modification of interfacial spin-orbit field-vector

L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, C. H. Back

摘要:

电流感生自旋轨道磁场(iSOFs),无论是在具有破碎的反转结构的单晶铁磁体1,2中,还是在非磁性金属/铁磁金属双层膜3,4中,都可以产生作用于铁磁体磁化的自旋轨道转矩,从而提供了一种有效的操纵方法。为了进一步降低自旋轨道转矩器件的功耗,非常希望通过场效应来控制iSOFs,其中功率消耗通过对电容器5、6充电/放电来确定。特别地,作用在铁磁金属上的iSOFs的有效电场控制对于实际应用是至关重要的。众所周知,在具有C2 v对称性的单晶Fe/GaAs(001)异质结构中,由于缺乏反转能力,在Fe/GaAs(001)界面处出现界面SOFs 7,8。在这里,我们表明,通过在Fe/GaAs界面上施加栅极电压,可以通过改变界面自旋轨道相互作用的大小来鲁棒地调制作用于Fe的界面SOFs。我们的研究结果表明,第一次,在肖特基势垒的电场是能够修改的SOFs,这可以用于低功耗的自旋轨道扭矩器件的发展。

英文摘要:

Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly desirable to control iSOFs by the field-effect, where power consumption is determined by charging/discharging a capacitor5,6. In particular, efficient electric-field control of iSOFs acting on ferromagnetic metals is of vital importance for practical applications. It is known that in single crystalline Fe/GaAs (001) heterostructures with C2v symmetry, interfacial SOFs emerge at the Fe/GaAs (001) interface due to the lack of inversion symmetry7,8. Here, we show that by applying a gate-voltage across the Fe/GaAs interface, interfacial SOFs acting on Fe can be robustly modulated via the change of the magnitude of the interfacial spin-orbit interaction. Our results show that, for the first time, the electric-field in a Schottky barrier is capable of modifying SOFs, which can be exploited for the development of low-power-consumption spin-orbit torque devices.

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