半导体量子点和纳米棒中量子限制斯塔克效应的单分子电生理表征
Characterizing the Quantum Confined Stark Effect in Semiconductor Quantum Dots and Nanorods for Single-Molecule Electrophysiology
摘要：
我们优化了量子限制斯塔克效应QCSE的电压纳米传感器的性能。开发了一种用于单颗粒QCSE表征的高通量方法，并用于筛选此类纳米传感器库。II型ZnSe CdS种子纳米棒被发现在这项工作中评估的不同的纳米传感器之间具有最好的性能。表征了外加电场下激子发光强度变化与光谱变化的相关程度。单个ZnSe CdS纳米棒对电压调制的时间响应的上限的特征在于使用新型光子计数相机的高通量、高时间分辨率强度测量。测量的3.5 us响应时间受到电压调制电子器件的限制，并且表示比记录神经元中的动作电位所需的带宽高约30倍的带宽。
英文摘要：
We optimized the performance of quantum confined Stark effect QCSE based voltage nanosensors. A high throughput approach for single particle QCSE characterization was developed and utilized to screen a library of such nanosensors. Type II ZnSe CdS seeded nanorods were found to have the best performance among the different nanosensors evaluated in this work. The degree of correlation between intensity changes and spectral changes of the excitons emission under applied field was characterized. An upper limit for the temporal response of individual ZnSe CdS nanorods to voltage modulation was characterized by high throughput, high temporal resolution intensity measurements using a novel photon counting camera. The measured 3.5 us response time is limited by the voltage modulation electronics and represents about 30 times higher bandwidth than needed for recording an action potential in a neuron.
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