用于多离子束操纵的圆片级静电四极阵列
Waferscale Electrostatic Quadrupole Array for Multiple Ion Beam Manipulation
摘要：
我们报道了第一个用于聚焦高能离子束的穿晶硅基静电四极阵列（ESQA）。该器件是基于晶片的加速器架构的关键使能器，该加速器架构使其自身在带电粒子加速器的成本、体积和重量方面降低了数量级。ESQ是开发紧凑型多静电四极阵列直线加速器（MEQALAC）的关键构件[1]。在MEQALAC中，使用静电力来聚焦离子，并且静电场缩放通过针对由击穿限制设置的给定峰值电场减小射束孔径尺寸来允许高射束电流密度。与相同面积的单个孔径束相比，使用多个平行束（每个平行束总计为面积A）可以导致更高的总束电流。较小的尺寸也允许较高的聚焦电场梯度，并因此允许较高的平均射束电流密度。在这里，我们证明了深反应离子蚀刻（DRIE）微加工的柱状电极，电隔离的氮化硅薄膜，使更高的性能ESQA与晶圆级的可扩展性。制作的ESQA能够在空气中保持高达1kV。将3 × 3阵列的12 keV氩离子束聚焦在晶片加速器单元中，为多晶片加速器铺平道路。
英文摘要：
We report on the first through-wafer silicon-based Electrostatic Quadrupole Array (ESQA) to focus high energy ion beams. This device is a key enabler for a wafer based accelerator architecture that lends itself to orders-of-magnitude reduction in cost, volume and weight of charged particle accelerators. ESQs are a key building block in developing compact Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) [1]. In a MEQALAC electrostatic forces are used to focus ions, and electrostatic field scaling permits high beam current densities by decreasing the beam aperture size for a given peak electric field set by breakdown limitations. Using multiple parallel beams, each totaling to an area A, can result in higher total beam current compared to a single aperture beam of the same area. Smaller dimensions also allow for higher focusing electric field gradients and therefore higher average beam current density. Here we demonstrate that Deep Reactive Ion Etching (DRIE) micromachined pillar electrodes, electrically isolated by silicon-nitride thin films enable higher performance ESQA with waferscale scalability. The fabricated ESQA are able to hold up to1 kV in air. A 3*3 array of 12 keV argon ion beams are focused in a wafer accelerator unit cell to pave the way for multiple wafer accelerator.
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