We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition metal oxides for spintronic applications.
Phase diagrams and free-energy landscapes for model spin-crossover materials with antiferromagnetic-like nearest-neighbor and ferromagnetic-like long-range interactions
我们给出了一个在高自旋态和低自旋态之间具有两步跃迁的模型自旋交叉材料的相图、自由能图和序参量分布（一个具有反铁磁类最近邻和铁磁类长程相互作用的正方晶格伊辛模型）。Rikvold等人，Rev. B 93，064109（2016）]。结果是用最近引进的宏观约束的Wang-Landau蒙特卡罗模拟方法[C. H.陈，G. Brown和P.A. Rikvold，Phys. Rev. E 95，053302（2017）]。该方法的计算效率，使计算的热力学量的温度范围很广，应用领域，和远程相互作用强度。对于中等强度的长程相互作用，相图中的三临界点被成对的临界端点和平均场临界点所取代，这些临界点产生了角形的亚稳性区域。相应的自由能景观提供洞察的性质不对称，多个磁滞回线，已被实验观察到的自旋交叉材料的特点是竞争的短程相互作用和长程弹性相互作用。
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the…
High-Throughput Computational Discovery of Inverted Resistive Switching in Two-Dimensional Materials
Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design（新加坡科技设计大学）；Institute of Advanced Intelligence and Computing (IAIC), Agency for Science, Technology and Research (A*STAR)（科学技术研究局）；School of Information Science and Technology, Northwest University（西北大学）；School of Physics and Optoelectronics, Xiangtan University（湘潭大学）；Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, Nanjing University（南京大学）；Quantum Innovation Centre (Q. InC), Agency for Science Technology and Research (A*STAR)（科学技术研究局）；Department of Mechanical Engineering, National University of Singapore（新加坡国立大学）；Department of Materials Science and Engineering, National University of Singapore（新加坡国立大学）；Department of Electrical and Computer Engineering, National University of Singapore（新加坡国立大学）
Intricate magnetic landscape in antiferromagnetic kagome metal TbTi$_3$Bi$_4$ and interplay with Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ (Ln: Tb-Lu) shurikagome metals
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. In this study, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe$_{1/3+δ}$NbS$_2$…
