Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant exploratory research in 2D materials has been achieved, the understanding of 2D electronic transport and carrier dynamics remains in a nascent stage. Furthermore, since prior review articles have provided general overviews of 2D materials or specifically focused on charge transport in graphene, here we instead highlight charge transport mechanisms in post-graphene 2D materials with particular emphasis on transition metal dichalcogenides and black phosphorus. For these systems, we delineate the intricacies of electronic transport including bandstructure control with thickness and external fields, valley polarization, scattering mechanisms, electrical contacts, and doping. In addition, electronic interactions between 2D materials are considered in the form of van der Waals heterojunctions and composite films. This review concludes with a perspective on the most promising future directions in this fast-evolving field.
First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes. Machine-learning (ML)-based materials informatics approaches (MI) are increasingly used to accelerate design and discovery of new materials with targeted properties, and extend the applicability of first-principles techniques to larger systems. However, few studies exploited MI to learn electronic structure properties and use the knowledge to predict the respective tra…
We investigate the electronic transport properties of copper-graphene composites using a density-functional framework. Conduction in composites by varying the interface distance of a copper/graphene/copper (Cu/G/Cu) interface models was studied. The electronic density of states reveals increasing contributions from both copper and carbon atoms near the Fermi level with decreasing Cu-G interfacial distance. Electronic conductivity of the models computed using the Kubo-Greenwood formula showed the conductivity increases with decreasing Cu-G distance. We also find that the conductivity saturates …
Tuning electronic heat transport in graphene/metal heterostructures with ultralow thermal conductivity
现有的超低热导率材料由于材料中有限的电子传输而不适用于热电应用。在这里，我们提出了一类新的超低热导率材料与大量的电子热传输。我们的样品是通过热蒸发或射频磁控溅射沉积的转移石墨烯和金属钯膜（Pd，Au和Ni）的石墨烯/金属异质结构。对于蒸发的样品，我们实现了0.06 W m-1 K-1的超低热导率，声子作为主要的热载体。超低的热导率是由于石墨烯和金属中声子能量的巨大差异。有趣的是，对于溅射样品，我们发现，约50%的热量是由电子携带的，即使热导率约为0.1 W m-1 K-1。我们将电子贡献归因于电子在石墨烯中穿过原子级针孔的传输。这种具有超低导热系数和电子输运特性的新材料有望在热电领域得到应用。
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the…
Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects on the electronic properties of interconnected MoS$_2$ model flakes systems upon functionalization with different thiol molecule linkers, namely thiophenol, 1,4-benzenedithiol, 1,2-ethanedithiol, and…
We present thermoelectric properties of Be$_2$C monolayer based on density functional theory and semi-classical Boltzmann transport theory. Electronic structure calculations predict this material as a semiconductor with a direct bandgap of 2.0 eV computed using Gaussian-attenuating Perdew-Burke-Ernzerhof (Gau-PBE) hybrid functional. The Gau-PBE band structure is used to compute transport properties by solving the Boltzmann transport equation under the constant relaxation time approximation. In this work, we have explicitly determined the relaxation time by studying the electron-phonon interact…
Tunable Electronic and Transport Properties of Biphenylene via Fluorination and Disorder
Instituto de Física, Universidade Federal de Uberlândia（乌贝兰迪亚联邦大学物理研究所）；Ilum School of Science, Brazilian Center for Research in Energy and Materials (CNPEM)（巴西能源与材料研究中心（CNPEM）伊卢姆科学学院）
Tuning two dimensional nanomaterial's structural and electronic properties has facilitated the new research paradigm in electronic device applications. In this work, the first principles density functional theory based methods are used to investigate the structural, electronic, and transport properties of an orthorhombic diboron dinitride based polymorph. Interestingly, it depicts a low band gap semiconducting nature with a robust anisotropic behaviour compared to the hexagonal boron nitride, which is an insulator and isotropic. We can also tune the structural and electronic properties of the …
Recrystallization of glasses is important in a wide range of applications including electronics and reactive materials. Molecular dynamics (MD) has been used to provide an atomic picture of this process, but prior work has neglected the thermal transport role of electrons, the dominant thermal carrier in metallic systems. We characterize the role of electronic thermal conductivity on the velocity of recrystallization in Ni using MD coupled to a continuum description of electronic thermal transport via a two-temperature model. Our simulations show that for strong enough coupling between electro…
Ternary intermetallic half-Heusler (HH) compounds (XYZ) with 18 valence electron count viz. ZrCoSb, ZrNiSn, and ZrPdSn, have revealed promising thermoelectric properties. Exemplarily, it has been experimentally observed that a slight change in the content of Y-site atoms (by ~3-12.5% i.e., m =0.03, 0.125 in ZrY(1+m)Z) leads to drastic lowering in the lattice thermal conductivity (kL) by more than 65-80% in many of these compounds. The present work aims at exploring the possibility of maximizing the electronic transport scenario after achieving the low kL limit in these compounds. By taking int…
In this work we study, theoretically, electronic mobility of the silicon carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great potential for applications in extreme conditions. Thus, the study of the electronic mobility of this semiconductor is of great interest. In this work were theoretically deduced: drift velocity, displacement and mobility of the charge carriers in the n-type doped 3C-SiC semiconductor, subjected to a constant electric field. The dependence of these transport properties as a function of the intensity of the electric field and temperature was analyzed…
We review electronic transport in superconducting junctions with Sr$_2$RuO$_4$. Transport measurements provide evidence for chiral domain walls and, therefore, chiral superconductivity in superconducting Sr$_2$RuO$_4$, but so far, the symmetry of the underlying superconducting state remains inconclusive. Further studies involving density of states measurements and spin-polarised transport in local/non--local Sr$_2$RuO$_4$ junctions with magnetic materials could lead to fundamental discoveries and a better understanding of the superconducting state.
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the frontier occupied and unoccupied molecular orbitals are spatially located in two different parts of the coupled dot, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of w…
Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate the transport properties of MoS$_2$ zigzag nanoribbons under a butadiene (C$_4$H$_6$) atmosphere, as this compound has been used to obtain MoS$_2$ flakes by exfoliation. We use density functional theory combined with non-equilibrium Green's function techniques, in a methodology contemplating disorder and different coverages. Our results indicate a strong modu…
We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missing m-xylene units emerging during the cyclodehydrogenation step of the on-surface synthesis are the most common point defects. These "bite'' defects act as spin-1 paramagnetic centers, severely disrupt the conductance spectrum around the band extrema, and give rise to spin-polarized charge transport. We further show that the electronic conduct…
