铁磁-多铁性系统中单向各向异性的电压控制
Voltage Control of Uni-directional Anisotropy in Ferromagnet-Multiferroic System
摘要：
超低能量切换机制的演示对于计算设备的持续改进是必要的。铁电（FE）和多铁性（MF）阶次及其操纵承诺状态变量的理想组合以达到用于逻辑和存储器的阿托焦耳范围（即，开关能量比纳米电子器件低约30倍）。在BiFeO 3的反铁磁（AFM）和FE订单之间的耦合是强大的，在室温下，可扩展的电压，稳定的FE订单，并可以集成到一个超越CMOS时代的制造工艺。在这个系统中的AFM秩序和倾斜的磁矩的存在导致与铁磁体如CoFe或LSMO的交换相互作用。虽然之前的工作已经表明交换耦合（单轴各向异性）可以用电场控制，但仍然存在一些令人困惑的问题。也许其中最有趣的是BiFeO 3-CoFe双层没有表现出任何电控方向各向异性，即，交换偏置是180 °磁反转的潜在机制，并且与切换动力学无关。然而，逻辑和存储器所需要/优选的是类似于所施加的场工作的磁电机制，即电压调制的单向各向异性。在这里，我们提出了一个横向缩放的自旋阀，是交换耦合到BiFeO 3在室温下的电控制的交换偏置的证据。我们表明，在这个双层交换偏置是热鲁棒性，电气控制和可逆的。我们预计，在这种规模的尺寸磁电提供了一个强大的计算路径超越现代纳米电子晶体管，使一类新的非易失性，超低能量计算元件。
英文摘要：
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic (AFM) and FE orders is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as CoFe or LSMO. While previous work has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field, several puzzling issues remain. Perhaps the most intriguing among them is that the BiFeO3-CoFe bilayer did not demonstrate any electrically controlled directional anisotropy, i.e., an exchange bias, which is a potential mechanism for 180o magnetic reversal and is independent of switching kinetics. However, what is needed/preferred for logic and memory is a magneto-electric mechanism that works analogous to an applied field, i.e a uni-directional anisotropy that is voltage modulated. Here, we present the evidence of electrical control of exchange bias of a laterally scaled spin valve that is exchange-coupled to BiFeO3 at room temperature. We show that the exchange bias in this bilayer is thermally robust, electrically controlled and reversible. We anticipate that magneto-electricity at such scaled dimensions provides a powerful pathway for computing beyond the modern nanoelectronics transistors by enabling a new class of non-volatile, ultra-low energy computing elements.
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