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arXiv 1801.02522physics.acc-ph
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新一代3 GeV同步辐射光源的新型双三弯消色差光栅(DTBA)设计

Novel Double Triple Bend Achromat (DTBA) lattice design for a next generation 3 GeV Synchrotron Light Source

A. Alekou, R. Bartolini, N. Carmignani, S. M. Liuzzo, P. Raimondi, T. Pulampong, R. P. Walker

摘要:

双三弯消色差(DTBA)晶格\cite{DTBAipac16}是新一代3 GeV同步辐射光源的新型晶格设计。从ESRF开发的混合多弯曲消色差(HMBA)晶格~ \cite{ESRF}的修改开始,并受到Diamond开发的双双弯曲消色差(DDBA)晶格~ \cite{Diamond1, Diamond2}的启发,DTBA结合了两种细胞的优点。典型的MBA晶格单元具有专用于插入装置的一个直线部分,而这种新的单元布局具有两个这样的漂移,从而增加了用于安装插入装置的可用空间的比例。DTBA晶格实现$\sim\mathrm{132~pm}$的发射度、$\mathrm{\sim\pm10\pm1~mm}$的动态孔径(在注入点处计算)、$\mathrm{\sim\mathrm88\pm5\%}$的注入效率和具有误差的$\mathrm{1.4\pm0.2~h}$的寿命。DTBA的特点,线性和非线性光学优化的方法和结果,有和没有误差的存在下,详细介绍。

英文摘要:

The Double Triple Bend Achromat (DTBA) lattice~\cite{DTBAipac16} is a novel lattice design for a next generation 3 GeV Synchrotron Light Source. Starting from a modification of the Hybrid Multi Bend Achromat (HMBA) lattice~\cite{ESRF} developed at ESRF and inspired by the Double-Double Bend Achromat (DDBA) lattice~\cite{Diamond1, Diamond2} developed at Diamond, DTBA combines the advantages of both cells. The typical MBA lattice cells have one straight section dedicated to an insertion device, whereas this new cell layout has two such drifts, thus increasing the fraction of available space for the installation of insertion devices. The DTBA lattice achieves an emittance of $\sim\mathrm{132~pm}$, a dynamic aperture of $\mathrm{\sim\pm10\pm1~mm}$ (calculated at the injection point), an injection efficiency of $\mathrm{\sim\mathrm88\pm5\%}$ and a lifetime of $\mathrm{1.4\pm0.2~h}$ with errors. The characteristics of DTBA, the methodology and results of the linear and non-linear optics optimisations, with and without the presence of errors, are presented in detail.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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