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arXiv 1801.01178cond-mat.soft
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基于伪连续介质模型的表面润湿研究

Surface Wetting Study via Pseudocontinuum Modeling

Meysam Makaremi, Myung S. Jhon, Meagan S. Mauter, Lorenz T. Biegler

摘要:

在膜的分子设计中,对不同疏水程度的表面润湿性的准确估计变得越来越重要。本文将分子动力学和准连续介质理论相结合,建立了一个简单的接触角估算模型。进行分子动力学模拟以从纳米级计算计算水滴与光滑壁之间的宏观尺度接触角。由于无限数量的分子,宏观水平的液滴包括无数的自由度,不可能直接通过原子模拟来研究。为了解决这个问题,我们采用了两种方法组成的伪连续近似和修改的Young-Laplace方程。前者涉及9-3 Lennard-Jones(L-J)势,可以大大减少分子模拟中的自由度,而后者将介观接触角与实际接触角联系起来。我们改变不同的参数,包括液体的表面电位特性和温度,并计算水的接触角,利用质量密度轮廓拟合方法来预测疏水和亲水基板的广谱。计算结果与实验数据进行了比较,包括石墨,硅和金属的各种材料。这项研究表明,伪连续模拟是一种准确的方法,探测表面润湿性的各种工艺在一个低的计算成本。

英文摘要:

Accurate estimation of surface wettability for various degrees of hydrophobicity becomes increasingly important in the molecular design of membrane. In this paper, we develop simple yet physically realistic model for estimating contact angle via hybridizing molecular dynamics and pseudocontinuum theory. Molecular dynamics simulations were carried out to compute the macro-scale contact angle between a water droplet and smooth walls from the nanoscale calculations. A macro-level droplet including countless degrees of freedom due to an infinite number of molecules is impossible to be studied directly via atomistic simulations. To resolve this issue, we employed two approaches consisting of the pseudocontinuum approximation and the modified Young-Laplace equation. The former involves the 9-3 Lennard-Jones (L-J) potential and can drastically reduce the degrees of freedom in molecular simulations, while the latter relates the mesoscale contact angle to the realistic one. We altered different parameters including the liquid-surface potential characteristics and the temperature, and calculated the water contact angle by leveraging the mass density profile fitting method to predict the broad spectrum of hydrophobic and hydrophilic substrates. The computational results were compared with the experimental data for various materials including graphite, silicon, and metals. This study suggests that pseudocontinuum modeling is an accurate approach to probe surface wettability for various processes at a low computational cost.

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