Hamamatsu、SensL和AdvanSiD UV扩展SiPMs的中子辐照试验
Neutron irradiation test of Hamamatsu, SensL and AdvanSiD UV-extended SiPMs
摘要：
在本文中，我们报告的测量定制硅光电倍增器阵列（SiPMs）由三家公司生产：滨松（日本），AdvanSiD（意大利）和SensL（爱尔兰）的中子辐射硬度。这些定制SiPM由6 x 6 mm^2单片单元的2 x 3阵列组成，像素尺寸分别为50 um（Hamamatsu和SensL）和30 um（AdvanSid）。每个供应商的样品都暴露于易北河正电子源设施（德累斯顿）产生的中子中，总注量高达~ 8.5 x 10^11 n_（1 MeV）/cm ^2。测试结果表明，暗电流几乎与中子注量成线性关系。通过在辐照测试后两个月测量暗电流来量化室温退火。还评估了暗电流对器件温度和施加偏压的依赖性。
英文摘要：
In this paper, we report the measurement of the neutron radiation hardness of custom Silicon Photomultipliers arrays (SiPMs) manufactured by three companies: Hamamatsu (Japan), AdvanSiD (Italy) and SensL (Ireland). These custom SiPMs consist of a 2 x 3 array of 6 x 6 mm^2 monolithic cells with pixel sizes of respectively 50 um (Hamamatsu and SensL) and 30 um (AdvanSid). A sample from each vendor has been exposed to neutrons generated by the Elbe Positron Source facility (Dresden), up to a total fluence of ~ 8.5 x 10^11 n_(1 MeV)/cm^2. Test results show that the dark current increases almost linearly with the neutron fluence. The room temperature annealing was quantified by measuring the dark current two months after the irradiation test. The dependence of the dark current on the device temperature and on the applied bias have been also evaluated.
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