Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching the energy of the entangled photons to atomic transitions (a promising route towards quantum networking) remains an outstanding challenge.
Here, we overcome these obstacles by introducing a modified approach to droplet epitaxy on a high symmetry (111)A substrate, where the fundamental crystallization step is performed at a significantly higher temperature as compared to previous reports. Our method drastically improves the yield of entanglement-ready photon sources near the emission wavelength of interest, which can be as high as 95% due to the low values of fine structure splitting and radiative lifetime, together with the reduced exciton dephasing offered by the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in the operating spectral region of Rb-based slow-light media, providing a viable technology for quantum repeater stations.
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for den…
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmet…
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 um and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for the fabrication of silicon oxycarbide hard mask for selective area epitaxy of InAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grown via droplet epitaxy. Our detailed investigation of the quantum dot car…
This review article discusses and compares various techniques for fabricating metal nanowires. We begin by defining what we mean by a nanowire, and why such nanostructures are of scientific and technological interest. We then present different fabrication methodologies, describing in some detail the advantages of each. "Top-down" techniques discussed include: electron beam lithography; scanned probe lithography; step-edge and molecular beam epitaxy templating; and nanotube templating. "Bottom-up" methodologies covered include: electrodeposition into etched porous media; direct chemical synthes…
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by mole…
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal grow…
Self-ordered nanostructures on patterned substrates: Experiment and theory of metalorganic vapor-phase epitaxy of V-groove quantum wires and pyramidal quantum dots
Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface,…
Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters
DTU Electro, Technical University of Denmark（丹麦技术大学电气工程系）；DTU Nanolab, Technical University of Denmark（丹麦技术大学纳米实验室）；NanoPhoton-Center for Nanophotonics, Technical University of Denmark（丹麦技术大学纳米光子学中心）；Institute of Theoretical Physics, Wrocław University of Science and Technology（弗罗茨瓦夫科技大学理论物理研究所）；Department of Materials Science, University of Milano-Bicocca（米兰比可卡大学材料科学系）
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the Bell pairs of 0.71 +- 0.015, much beyond the classical limit. The quantum nature of the emitted pairs is conserved at temperatures of up to ~65 K, and is essentially limited by the charge carrier conf…
The rapid development of quantum information processors has accelerated the demand for technologies that enable quantum networking. One promising approach uses mechanical resonators as an intermediary between microwave and optical fields. Signals from a superconducting, topological, or spin qubit processor can then be converted coherently to optical states at telecom wavelengths. However, current devices built from homogeneous structures suffer from added noise and small conversion efficiency. Combining advantageous properties of different materials into a heterogeneous design should allow for…
Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide
Delft University of Technology（代尔夫特理工大学）；QuTech and Kavli Institute of Nanoscience, Delft University of Technology（代尔夫特理工大学量子纳米科学夸夫泰克研究所）；Kavli Institute of Nanoscience, Delft University of Technology（代尔夫特理工大学夸夫泰克纳米科学研究所）；Catalan Institute of Nanoscience and Nanotechnology – ICN2 (CSIC and BIST)（加泰罗尼亚纳米科学与技术研究所）；ICREA（加泰罗尼亚高级研究学院）
